Slow and fast dynamics of gain and phase in a quantum dot semiconductor optical amplifier

Vallaitis, T.; Koos, C.; Bonk, R.; Freude, W.; Laemmlin, M.; Meuer, C.; Bimberg, D.; Leuthold, Juerg

doi:10.1364/oe.16.000170

Cited by 108 publications

(57 citation statements)

References 13 publications

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“…(4.44) can be experimentally determined. This allows the evaluation of time-resolved phase dynamics of the amplified pulse, and can be used, e.g., to determine charge-carrier induced frequency chirp [VAL08].…”

Section: Comparison With Experimental Measurementsmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Comparison With Experimental Measurementsmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…Finally, the performance of the device is similar to the one shown in Ref. [24] for a polymer-filled vertical slot; however, our system, being made of inorganic materials and only requiring CMOS processes, is expected to provide more robust and stable devices with less temperature constraints.…”

Section: Results and Conclusionsupporting

confidence: 54%

“…Moreover, free carrier generation also limits its efficiency. There are several applications of FWM, such as generation of new frequencies [24], wavelength conversion [19,25] and parametric amplification [26][27][28].…”

Section: Kerr Effectmentioning

confidence: 99%

Ultrafast, CMOS compatible, integrated all optical switching

Abril¹

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“…For this purpose, we have derived a nonlinear state space model (NSSM) for the device in which the average values of the carrier occupation probabilities are the state variables of the system [12]. 3. Gain and phase response of the QD-SOA under the EP, OP, and EOP schemes To investigate the gain and phase recovery time of the QD-SOA under dierent pumping schemes, we numerically perform a single pulse pump-probe experiment and monitor the dynamic response of the device.…”

Section: Physical Structure Of the Qd-soamentioning

confidence: 99%

Sub-Nanosecond Phase Recovery in Quantum-Dot Semiconductor Optical Amplifiers

Abedi

Taleb

2013

Acta Phys. Pol. A

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In this paper, optimal design of a pumping scheme for achieving the best gain and phase response in quntum--dot semiconductor optical ampliers is investigated. For the rst time, the dynamic response of the quntum-dot semiconductor optical amplier is evaluated under three dierent pumping schemes, known as optical pumping, electrical pumping, and electro-optical pumping. Simulation results show that the shortest gain recovery time in quntum-dot semiconductor optical ampliers can be achieved under the electrical pumping scheme. However, under the optical pumping and electro-optical pumping schemes, the quntum-dot semiconductor optical amplier represents a shorter phase recovery compared to the electrical pumping scheme. We found that a sub-nanosecond phase recovery in the quntum-dot semiconductor optical amplier can be achieved under the OP and electro--optical pumping schemes, which can never be achieved under the electrical pumping, because of the slow carrier dynamics of the carrier reservoir. Also, it was found that the gain recovery process in an optically pumped quntum-dot semiconductor optical amplier can be signicantly accelerated at cryogenic temperatures. This result demonstrates the superiorities of the optical pumping scheme over the electrical pumping and electro-optical pumping schemes at low temperatures, where both the gain and phase recovery times of an optically pumped quantum-dot semiconductor optical amplier are drastically decreased.

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Slow and fast dynamics of gain and phase in a quantum dot semiconductor optical amplifier

Cited by 108 publications

References 13 publications

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Ultrafast, CMOS compatible, integrated all optical switching

Sub-Nanosecond Phase Recovery in Quantum-Dot Semiconductor Optical Amplifiers

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