Slim P-E hysteresis loop and anomalous dielectric response in sol-gel derived antiferroelectric PbZrO3 thin films

Abstract

Sol-gel derived PbZrO3 (PZ) thin films have been deposited on Pt(111)∕Ti∕SiO2∕Si substrate and according to the pseudotetragonal symmetry of PZ, the relatively preferred (110)t oriented phase formation has been noticed. The room temperature P-E hysteresis loops have been observed to be slim by nature. The slim hysteresis loops are attributed to the [110]t directional antiparallel lattice motion of Pb ions and by the directionality of the applied electric field. Pure PZ formation has been characterized by the dielectric phase transition at 235°C and antiferroelectric P-E hysteresis loops at room temperature. Dielectric response has been characterized within a frequency domain of 100Hz–1MHz at various temperatures ranging from 40to350°C. Though frequency dispersion of dielectric behaves like a Maxwell–Wagner type of relaxation, ω2 dependency of ac conductivity indicates that there must be G-C equivalent circuit dominance at high frequency. The presence of trap charges in PZ has been determined by Arrhenius plots of ac conductivity. The temperature dependent n (calculated from the universal power law of ac conductivity) values indicate an anomalous behavior of the trapped charges. This anomaly has been explained by strongly and weakly correlated potential wells of trapped charges and their behavior on thermal activation. The dominance of circuit∕circuits resembling Maxwell–Wagner type has been investigated by logarithmic Nyquist plots at various temperatures and it has been justified that the dielectric dispersion is not from the actual Maxwell–Wagner-type response.

Phase Competition in High-Quality Epitaxial Antiferroelectric PbZrO3 Thin Films

“…38−40 Besides, over the whole temperature range from 30 to 350 °C, the dielectric loss is within 0.035, much smaller than that reported in previous studies. 38,40 These results further confirm the high quality of the films. Interestingly, the transition temperatures for both heating and cooling were nearly 40 °C higher than the reported peak temperature in the bulk.…”

A Comprative Study Of Sol-gel And Solid-state Prepared La3+ Doped Multiferroic BiFeO3

“…Similar kind of dielectric behaviour with large value of dielectric constant has been found in citric acid route prepared SmFeO 3[10] and also in other materials prepared using hydrothermal synthesis[11]. This kind of behaviour exhibiting high dielectric constant at low frequency and the low value at high frequency is a mark of large Maxwell-Wagner type dielectric dispersion[12]. The space charge polarization in these samples may result into such high value of dielectric constant at low frequencies.…”

Enhancement of energy storage density in antiferroelectric PbZrO3 films via the incorporation of gold nanoparticles

“…Therefore, the diffuse behavior of phase transition can be attributed to the decrease in perovskite PZO grain size with the increasing Au concentration. In addition, it can be seen from Figure A that the dielectric loss is not affected by the addition of Au NPs, and increases slightly with the increase of temperature, which is similar to the results of the PZO and Pb 0.8 Ba 0.2 ZrO 3 thin films reported in the literature …”

“…In addition, it can be seen from Figure 7A that the dielectric loss is not affected by the addition of Au NPs, and increases slightly with the increase of temperature, which is similar to the results of the PZO and Pb 0.8 Ba 0.2 ZrO 3 thin films reported in the literature. 5,35 The frequency-dependent relative permittivity and dielectric loss of the Au-PZO nanocomposite films were measured from 1 kHz to 1 MHz at room temperature and 0.1 volts, and the results are shown in Figure 7B. The dielectric loss values of the Au-PZO films at the whole frequency are almost the same, indicating that the addition of Au NPs has no significant effect on dielectric loss.…”