Skewness and kurtosis of height distribution of thin films simulated by larger curvature model with noise reduction techniques

Disrattakit, P.; Chanphana, R.; Chatraphorn, P.

doi:10.1016/j.physa.2017.04.075

Cited by 5 publications

(3 citation statements)

References 28 publications

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“…Topographic AFM images of Figure a (and in Supplementary Material) seem to confirm this model since no molecular aggregates are visible (or, at most, they are thinner than the AFM z sensitivity, i.e., 0.025 nm) . On the contrary, such molecules can be indirectly detectable by measuring the Skewness and Kurtosis of surfaces height distributions. − Both statistical parameters show a minimum at N ≈ 2.1 × 10 15 cm –3 , consistent with less adsorbed airborne contaminants which are, possibly, more closely related to the surface roughness with respect to other n -SiO x samples (see Supplementary Materials).…”

Section: Resultsmentioning

confidence: 60%

Native Silicon Oxide Properties Determined by Doping

Della Ciana,

Kovtun,

Summonte

et al. 2023

Langmuir

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The physico-chemical properties of native oxide layers, spontaneously forming on crystalline Si wafers in air, can be strictly correlated to the dopant type and doping level. In particular, our investigations focused on oxide layers formed upon air exposure in a clean room after Si wafer production, with dopant concentration levels from ≈10 13 to ≈10 19 cm −3 . In order to determine these correlations, we studied the surface, the oxide bulk, and its interface with Si. The surface was investigated using the contact angle, thermal desorption, and atomic force microscopy measurements which provided information on surface energy, cleanliness, and morphology, respectively. Thickness was measured with ellipsometry and chemical composition with X-ray photoemission spectroscopy. Electrostatic charges within the oxide layer and at the Si interface were studied with Kelvin probe microscopy. Some properties such as thickness, showed an abrupt change, while others, including silanol concentration and Si intermediate-oxidation states, presented maxima at a critical doping concentration of ≈2.1 × 10 15 cm −3 . Additionally, two electrostatic contributions were found to originate from silanols present on the surface and the net charge distributed within the oxide layer. Lastly, surface roughness was also found to depend upon dopant concentration, showing a minimum at the same critical dopant concentration. These findings were reproduced for oxide layers regrown in a clean room after chemical etching of the native ones.

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Section: Resultsmentioning

confidence: 60%

Native Silicon Oxide Properties Determined by Doping

Della Ciana,

Kovtun,

Summonte

et al. 2023

Langmuir

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“…Typically, surface roughness is employed to characterize the manner in which light disperses from an optical coating and it also provides insight into the surface quality [38]. An analysis of the surface topographical variation of all film was conducted utilizing AFM.…”

Section: Topological Analysismentioning

confidence: 99%

“…R q is the root mean square of surface height distribution, whereas R a is the average height computed across the entire scanned surface area. Skewness characterizes the degree of asymmetry in the distribution of heights relative to its mean, while kurtosis measures the extent to which height variations are uniform [38,39]. All roughness parameters were conducted by the utilization of the AFM equipment software.…”

Section: Topological Analysismentioning

confidence: 99%

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Nisha,

Sarkar,

Kumar

et al. 2024

Phys. Scr.

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Tin sulfide (SnS) has attracted significant interest due to its advantageous optoelectrical characteristics and abundant presence in nature. Post-deposition treatments (PDTs) are frequently employed to enhance the crystallinity of chalcogenide-based solar cells. This study examined the influence of the post-deposition heat treatment procedure on thermally evaporated SnS thin film. The post-deposition annealing process, as determined by XRD and AFM studies, supplies the necessary thermal energy for re-crystallization, potentially resulting in a modification of crystallite dimensions. The occurrence of Sn-S polytypes was examined using Raman and XPS studies. Annealing causes changes in the optical properties, as observed through optical analysis, which can be attributed to the improvement in crystallinity. Subjecting the material to annealing at temperature of 300 °C greatly improves both mobility and conductivity, while also causing a change in conduction type. The observed variations in conduction type are attributed to the differing ratios between the amounts of Sn2+ and Sn4+. This strategy offers a novel route for the fabrication of thin-film photovoltaic cells by using a p-type buffer layer.

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Thin film growth models with long surface diffusion lengths

Sousa

Reis

2018

Physica A: Statistical Mechanics and its Applications

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Skewness and kurtosis of height distribution of thin films simulated by larger curvature model with noise reduction techniques

Cited by 5 publications

References 28 publications

Native Silicon Oxide Properties Determined by Doping

Native Silicon Oxide Properties Determined by Doping

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Thin film growth models with long surface diffusion lengths

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