Size-induced transition-temperature reduction in nanoparticles of ZnS

Qadri, S. B.; Skelton, E. F.; Hsu, David S.; Dinsmore, A. D.; Yang, Jianping; Gray, H.F.; Ratna, Banahalli R.

doi:10.1103/physrevb.60.9191

Cited by 442 publications

(243 citation statements)

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“…Information on the particle size and strain for the AgInSe 2 lms was obtained from the full-width at half-maximum of the diraction peaks. The full-width at half-maximum b can be expressed as a linear combination of the contributions from the particle size, D and strain, ε through the relation [28]:…”

Section: Resultsmentioning

confidence: 99%

Structural, Optical, and Electrical Studies on Pulse Plated AgInSe_2 Films

Murugan¹,

Murali

2014

Acta Phys. Pol. A

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In this work, the pulse electrodeposition technique was employed for the rst time to deposit AgInSe2 lms. The lms were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM SeO2. The deposition potential was maintained at −0.98 V (SCE). Tin oxide coated glass substrates (5.0 Ω/sq) were used for depositing the lms. The duty cycle was varied in the range of 650%. The X-ray diraction pattern of the thin lms deposited at dierent duty cycles indicated the peaks corresponding to AgInSe2. The transmission spectra exhibited interference fringes. Resistivity of the lms increased from 1.5 Ω cm to 12.4 Ω cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/AgInSe2 solar cells increased with duty cycle.

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Section: Resultsmentioning

confidence: 99%

Structural, Optical, and Electrical Studies on Pulse Plated AgInSe_2 Films

Murugan¹,

Murali

2014

Acta Phys. Pol. A

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“…Semiconductor nanoparticles exhibit size-dependent electronic band gap energies [3], melting temperatures [4], solid-solid phase transition temperatures [5] and pressures [6]. In addition to these, doped semiconductor nanoparticles have tremendous potential for use in light emitting applications.…”

Section: Introductionmentioning

confidence: 99%

Optical and Optoelectronic Properties of ZnS Nanostructured Thin Film

2008

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ZnS nanocrystalline thin films were grown into the polyvinyl alcohol matrix and were synthesized by chemical route. Films were prepared on glass substrate by varying the deposition parameters and pH of the solution. Nanocrystalline thin film prepared under optimum growth conditions shows band gap value 3.88 eV as observed from optical absorption data. The band gap is found to be higher (3.88 eV) indicating blue shift. The particle size, calculated from the shift of direct band gap, due to quantum confinement effect is 5.8 nm. Photoluminescence spectrum shows the blue luminescence peaks (centered at 425 nm), which can be attributed to the recombination of the defect states. ZnS nanocrystalline thin films are also found to be photosensitive in nature. However, the photosensitivity decreases due to ageing and exposure to oxygen. In case of nanostructured film, the I−V characteristics are observed in dark and under illumination showing photosensitive nature of these films, too. The dark current, however, is found to be greater when observed in vacuum compared to air. Both dark current and photocurrent are found to be ohmic in nature up to a certain applied bias. The observed data shows that nanostructured films are found to be suitable for device application. The surface morphology of the film is also characterized by scanning electron microscope.

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“…The typical broadening of the three diffraction peaks is also observed, implying that the size of ZnS nanoparticles is very small. The broad diffraction peaks are attributed to the characteristic small particle effect [29]. The peak broadening at lower angle is more meaningful for the calculation of particle size.…”

Section: IIImentioning

confidence: 99%