Size-induced amorphous structure in tungsten oxide nanoparticles

Abstract

The properties of functional materials are intrinsically linked to their atomic structure. Here, the nano-size effects on the atomic structure of tungsten oxides are deduced, showing that the smallest particles observed are amorphous.

Detailed Analysis of the Synthesis and Structure of MAX Phase (Mo0.75V0.25)5AlC4 and Its MXene Sibling (Mo0.75V0.25)5C4

“…The disordered nature of the MXenes, especially the delaminated MXenes, makes it difficult to analyze their atomic structure using classic crystallographic techniques such as XRD. For these so-called “crystallographically challenged” materials, PDF is a powerful method to investigate their atomic structure. , Figure compares the PDFs obtained from the two multilayered and two delaminated MXenes alongside the PDF obtained from the “514” MAX phase. The PDFs are all very similar, indicating no major differences between the local structure of the MAX phase and that of the MXenes.…”

“…For these so-called "crystallographically challenged" materials, PDF is a powerful method to investigate their atomic structure. 35,36 Figure 7 compares the PDFs obtained from the two multilayered and two delaminated MXenes alongside the PDF obtained from the "514" MAX phase. The PDFs are all very similar, indicating no major differences between the local structure of the MAX phase and that of the MXenes.…”

The effect of ultrafine WO3 nanoparticles on the organization of thylakoids enriched in photosystem II and energy transfer in photosystem II complexes

“…In the DLS measurements, the larger nanoparticles observed had a size of about 80 ± 9 nm or from about 130 ± 50 to 530 ± 150 nm, having a large dispersion. Theoretical calculations show that in monoclinic WO 3 crystals the W–O bond distance is about 1.8 Å, and the W–W distance between two corner [WO 6 ]‐octahedra about 3.8 Å (Juelsholt et al, 2021). Theoretical data usually yield parameters slightly overestimated than the experimental data, which for W–O distances vary between 1.72 and 2.15 Å (Loopstra & Boldrini, 1966).…”

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

“…The film thickness of WO x was estimated to be about 1.5 nm. Since WO x was formed at room temperature and resultant thickness was a few nm, prepared WO x is thought to be amorphous structure [23]. From TEM observation and EELS profiles, the WO x /WSe 2 interface is considered to be a sharp interface.…”