2013
DOI: 10.1103/physrevb.87.035419
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Size effects on the electronic structure of ErSb nanoparticles embedded in the GaSb(001) surface

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Cited by 9 publications
(16 citation statements)
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(44 reference statements)
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“…The increase in InGaAs overgrowth required to recover the streaky RHEED pattern is attributed to the increased surface roughness during the initial stages of III-V overgrowth. 66 This makes increasing depositions of RE-As more challenging since defects and roughening that begin at the RE-V/III-V interfaces have a cumulative effect on subsequent periods grown in the superlattice.…”
mentioning
confidence: 99%
“…The increase in InGaAs overgrowth required to recover the streaky RHEED pattern is attributed to the increased surface roughness during the initial stages of III-V overgrowth. 66 This makes increasing depositions of RE-As more challenging since defects and roughening that begin at the RE-V/III-V interfaces have a cumulative effect on subsequent periods grown in the superlattice.…”
mentioning
confidence: 99%
“…Meanwhile, ErSb surfaces (Figure a insert) show a mixed pattern with ordering along both [110] and [1̅10] directions consistent with the (1 × 4)/(4 × 1) pattern that forms on the surface of ErSb (001) thin films . These islands are elongated along [1̅10], resulting from anisotropic surface diffusion of Er and Ga adatoms along the Sb-dimer rows. ,, …”
mentioning
confidence: 68%
“…27 These islands are elongated along [1̅ 10], resulting from anisotropic surface diffusion of Er and Ga adatoms along the Sb-dimer rows. 26,27,29 When a 2 ML thin layer of GaSb is subsequently deposited on the surface in Figure 2a, it does not immediately wet the exposed ErSb island surfaces (Figure 2b). The overgrown surface is characterized by 1−2 ML deep pits that have the same areal density as the starting 0.6 ML ErSb surface and terminated in the same (1 × 4)/(4 × 1) reconstruction.…”
mentioning
confidence: 99%
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