Size distribution and optical properties of self-assembled Ge on Si

Vescan, L.; Goryll, Michael; Stoïca, T.; Gärtner, P.; Grimm, K.N.; Chretien, O.; Mateeva, E.; Dieker, C.; Holländer, B.

doi:10.1007/s003390000555

Cited by 27 publications

(23 citation statements)

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“…Photoluminescence ͑PL͒ measurements evidenced an island related signal that is usually comprised between 0.75 and 0.9 eV. [3][4][5][6] These values are reported for Ge islands that are capped at the same temperature used for the island growth ͑typically 500-600°C͒. At these temperatures, island flattening is observed by transmission electron microscopy ͑TEM͒ 7 and intermixing may occur leading to a reduced Ge content in the islands.…”

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confidence: 94%

Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures

Stoffel¹,

Denker²,

Kar³

et al. 2003

Applied Physics Letters

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We investigate the emission wavelength region of self-assembled Ge/Si(001) islands. The islands were grown between 360 and 840 °C and subsequently capped with Si at low temperatures (300 °C). Under these conditions, the island morphology is preserved as revealed by atomic force microscopy. By decreasing the capping temperature, photoluminescence measurements evidence a systematic redshift enabling us to discuss the relative contribution of Si intermixing during growth and during capping. We also find that the emission wavelength can be extended up to 2.06 μm for hut clusters grown at 400 °C. By further decreasing the Ge growth temperature to 360 °C, the emission energy evidences a blueshift. This result is explained by enhanced charge carrier confinement in extremely small Ge quantum dots.

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confidence: 94%

Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures

Stoffel¹,

Denker²,

Kar³

et al. 2003

Applied Physics Letters

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“…3), which is about 2 orders of magnitude smaller than the quantum dots obtained at 1030 K [21]. The island size distribution is very narrow both compared with islands obtained by the thermodynamic Volmer-Weber mode [22] and also with regard to Ge͞Si(001), where the coexistence of elongated huts and domes gives rise to a double-peaked size distribution [23]. Postdeposition annealing as well as variation of the film thickness may further improve island uniformity.…”

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Minute SiGe Quantum Dots on Si(001) by a Kinetic 3D Island Mode

et al. 2001

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We investigated the initial growth stages of Si(x)Ge(1-x)/Si(001) by real time stress measurements and in situ scanning tunneling microscopy at deposition temperatures, where intermixing effects are still minute (< or =900 K). Whereas Ge/Si(001) is a well known Stranski-Krastanow system, the growth of SiGe alloy films switches to a 3D island mode at Si content above 20%. The obtained islands are small (a few nanometers), are uniform in shape, and exhibit a narrow size distribution, making them promising candidates for future quantum dot devices.

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“…Only 12 C C was selected to pass through the mass-analysing magnet. Just before reaching the Si substrate, 12 C C ions were decelerated down to 100 eV, i.e. the deposition energy is ¾100 eV.…”

Section: Methodsmentioning

confidence: 99%

AFM observation of nanosized SiC dots prepared by ion beam deposition

Narumi

Miyashita

et al. 2003

Surface & Interface Analysis

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Nanosized silicon carbide (SiC) dots are grown by low-energy mass-selected ion beam deposition (MSIBD) on 4• -off Si(111) substrates at temperatures of 800-950 • C and examined by atomic force microscopy (AFM).We find that the size distribution and the geometrical arrangement of SiC dots strongly depend on the substrate temperature, i.e. highly uniform SiC dots are formed at 800 • C and 850 • C; in particular, SiC dots are arranged in lines when the deposition temperature is as low as 800• C. These results indicate that self-assembled SiC dots can be prepared on misoriented substrates at low deposition temperatures.

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Size distribution and optical properties of self-assembled Ge on Si

Cited by 27 publications

References 0 publications

Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures

Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures

Minute SiGe Quantum Dots on Si(001) by a Kinetic 3D Island Mode

AFM observation of nanosized SiC dots prepared by ion beam deposition

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