Size-dependent binding energies and fine-structure splitting of excitonic complexes in single InAs/GaAs quantum dots

Rodt, Sven; Seguin, R.; Schliwa, A.; Guffarth, F.; Pötschke, K.; Pohl, Udo W.; Bimberg, D.

doi:10.1016/j.jlumin.2006.01.274

Cited by 11 publications

(10 citation statements)

References 32 publications

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“…Both of these confirm the correlation characteristic for a pair of exciton and biexciton lines from the same dot [ 72 ]. Additionally, from the energetic separation of X and XX lines, the biexciton binding energy of ~1.2 meV was determined, which is comparable to the values observed for standard InAs/GaAs QDs [ 73 ].…”

Section: Resultssupporting

confidence: 60%

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

et al. 2022

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We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.

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Section: Resultssupporting

confidence: 60%

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

et al. 2022

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“…At low bias ͑V B = 1.380 V͒, s-shell emission is observed. 13,14 The strength of the X line drops due to competition with the 2X state ͓Fig. The observed s-shell/p-shell energy splitting is 60 meV, comparable to other reports.…”

supporting

confidence: 84%

An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

Mehta

Reuter

Wieck

et al. 2010

Applied Physics Letters

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Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 μm and grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 84, 4155 (2004); 10.1063/1.1755411 1.31μ m InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemicalvapor deposition A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm

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“…The X and XX lines shifts symmetrically when changing the detected polarization angle, while the X + does not shift. 37,43,86,96 Let us now consider the line broadening of the different recombination lines as an additional key for attributing the excitonic complexes (see Fig.4 d). From a statistical point of view we observe a wide spread of values of the linewidth ranging from few tens up to few hundreds of µeV, still the order from the sharper to the broader lines among the different excitonic complexes does not vary: σ X − ∼ σ X > σ X + > σ XX (for the sake of thoroughness we note that X − featuring larger or smaller broadening with respect to the corresponding X can be found).…”

Section: Multi-exciton Emissionmentioning

confidence: 99%

“…Due to asymmetries in the confinement potential and local strain accumulation the two spin states of the bright neutral exciton are split by the so called fine structure splitting (FSS) associated to the exchange interaction; 26,[35][36][37]43,55,110 for the Ge-centers in study, it has been shown that the FSS is in the ∼100 µeV range (see Fig.4 c)). 68 The so called exciton binding energy is simply defined as the energy shift with respect to the corresponding neutral exciton line (BE XX = E X − E XX ).…”

Section: Multi-exciton Emissionmentioning

confidence: 99%

Germanium-based quantum emitters towards a time-reordering entanglement scheme with degenerate exciton and biexciton states

et al. 2015

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We address the radiative emission of individual germanium extrinsic centers in Al0.3Ga0.7As epilayers grown on germanium substrates. Micro-photoluminescence experiments demonstrate the capability of high temperature emission (70 K) and complex exciton configurations (neutral exciton X and biexciton XX, positive X + and negative X − charged exciton) of these quantum emitters. Finally, we investigate the renormalization of each energy level showing a large and systematic change of the binding energy of XX and X + from positive to negative values (from ∼+5 meV up to ∼-7 meV covering about ∼ 70 meV of the emission energy) with increasing quantum confinement. These light emitters, grown on a silicon substrate, may exhibit energy-degenerate X and XX energy levels. Furthermore, they emit at the highest detection efficiency window of Si-based single photon detectors. These features render them a promising device platform for the generation of entangled photons in the time-reordering scheme.arXiv:1412.4520v7 [cond-mat.mes-hall]

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Size-dependent binding energies and fine-structure splitting of excitonic complexes in single InAs/GaAs quantum dots

Cited by 11 publications

References 32 publications

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

Germanium-based quantum emitters towards a time-reordering entanglement scheme with degenerate exciton and biexciton states

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