A pure‐phase, unstrained and epitaxial α‐Fe2O3 film of thickness 250 nm has been fabricated by reactive rf sputtering over c‐Al2O3 substrate with nominal average surface roughness of 0.71 nm. Field induced spin‐reorientation temperature (TSR) and temperature dependent spin‐reorientation field (HSR) have been investigated. A linear relationship in the result has been found with ∂TSR/∂HSR equal to −0.92 ± 0.05 K kOe−1 and −0.89 ± 0.175 K kOe−1 by both methods, respectively. The field induced entropy change is argued to be the possible cause for the shift in the spin‐reorientation temperature with applied field. The entropy change associated with the first‐order phase transition is calculated on the basis of Clausius–Clapeyron equation and found to be 0.029 J kg−1 K−1.