Size Dependence of Terahertz Electromagnetic Wave Radiation from Intrinsic Josephson Junctions

Oikawa, Dai; Irie, Atsushi; Yamaki, Kazuhiro

doi:10.1109/tasc.2012.2231894

Cited by 7 publications

(2 citation statements)

References 12 publications

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“…When N was 180 junctions and voltage was 322 mV for most suppression of I det c , the frequency corresponded to 0.87 THz. Previous experiments on THz emission from Bi-2212 stacks with the mesa structure showed in-phase fundamental cavity resonance, as f res = c 1 /2W, for the electromagnetic wave, which agrees with the Josephson frequency f J , [26][27][28][29][30] where c 1 obtained using Eq. ( 1) is the maximum velocity.…”

Section: Resultssupporting

confidence: 84%

Hydrochloric acid modification process for fabricating Bi₂Sr₂CaCu₂O₈₊ _x THz oscillator stack on-chip coupled to THz detector

Tsubasa¹,

Kato²,

Kotaki³

et al. 2014

Jpn. J. Appl. Phys.

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We fabricated Bi2Sr2CaCu2O8+δ (Bi-2212) intrinsic Josephson junctions (IJJ) integrating of an oscillator and a detector by double side photolithography and material modification with a dilutehydrochloric acid solution (pH = 1.65) within a monolithic Bi-2212 crystal. The dilute hydrochloric solution modifies Bi-2212 to insulating BiOCl. Various lateral dimensions of the oscillator IJJ from 45 × 8 to 95 × 30 µm2 were formed; all of the detectors were about 15 × 10 to 15 × 30 µm2 in lateral dimensions. These stacks have 180–416 junctions. Zero voltage current for the detector stack was measured at 77 K while sweeping a bias voltage in the oscillator stack. The zero voltage current of the detector stack was strongly suppressed when a kink structure in the current–voltage curve of the oscillator stacks appeared. This indicates that the oscillator stack emits radiation at this voltage. From the Josephson voltage-frequency relation, it is found that the voltage corresponds to about 0.5–1 THz.

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Section: Resultssupporting

confidence: 84%

Hydrochloric acid modification process for fabricating Bi₂Sr₂CaCu₂O₈₊ _x THz oscillator stack on-chip coupled to THz detector

Tsubasa¹,

Kato²,

Kotaki³

et al. 2014

Jpn. J. Appl. Phys.

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“…ࡢᑡ࡞࠸ 500 ᥋ྜ௨ୗࡢⓎǢᏊࡢᨺᑕ≉ᛶো౯ࠊ BSCCO ᚤᑠ࣓ࢧᵓ⏝ࡋࡓ᳨ฟǢᏊ⏝࠸࡚ࡗ࡚ ࠾ 18,19) Fig. 9 (a) I-V and V det -V characteristics of the outermost quasiparticle branch and (b) the previously reported I-V curve and FT-IR spectra.…”

Section: ᡃࠎࡢࢢ࣮࡛ࣝࡣҝᕫⓨ⇕ᯝࡢᑠࡉ࠸ࠊ᥋ྜᩘmentioning

confidence: 99%

I-V and Radiation Characteristics in BSCCO Sub-THz Oscillator at Liquid He Temperature

Yamaki¹,

Tamura²,

Irie³

2014

TEION KOGAKU

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Terahertz emission from BSCCO single-crystal mesa structures has recently attracted considerable attention. Since power fed into the mesa is of the order of 10 6 W/cm 3 , a significant self-heating effect appears in I-V characteristics. We measured I-V characteristics of a BSCCO sub-THz oscillator using three cooling methods. When the mesa is cooled directly by liquid helium, the maximum applied voltage is increased up to three times compared with that cooled using a helium flow cryostat. Moreover, radiation characteristics of the BSCCO sub-THz oscillator in liquid helium were investigated using a BSCCO mesa detector. The radiation, identified as TM (2, 0) mode (i.e., the second harmonics of cavity resonance mode along width), is successfully observed.

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I – Vcharacteristics and THz radiation properties of Bi2212 mesas

Irie

Watanabe

Yajima

et al. 2017

J. Phys.: Conf. Ser.

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Size Dependence of Terahertz Electromagnetic Wave Radiation from Intrinsic Josephson Junctions

Cited by 7 publications

References 12 publications

Hydrochloric acid modification process for fabricating Bi₂Sr₂CaCu₂O₈₊ _x THz oscillator stack on-chip coupled to THz detector

Hydrochloric acid modification process for fabricating Bi₂Sr₂CaCu₂O₈₊ _x THz oscillator stack on-chip coupled to THz detector

I-V and Radiation Characteristics in BSCCO Sub-THz Oscillator at Liquid He Temperature

I – Vcharacteristics and THz radiation properties of Bi2212 mesas

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Size Dependence of Terahertz Electromagnetic Wave Radiation from Intrinsic Josephson Junctions

Cited by 7 publications

References 12 publications

Hydrochloric acid modification process for fabricating Bi2Sr2CaCu2O8+ x THz oscillator stack on-chip coupled to THz detector

Hydrochloric acid modification process for fabricating Bi2Sr2CaCu2O8+ x THz oscillator stack on-chip coupled to THz detector

I-V and Radiation Characteristics in BSCCO Sub-THz Oscillator at Liquid He Temperature

I – Vcharacteristics and THz radiation properties of Bi2212 mesas

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Product

Resources

About

Hydrochloric acid modification process for fabricating Bi₂Sr₂CaCu₂O₈₊ _x THz oscillator stack on-chip coupled to THz detector

Hydrochloric acid modification process for fabricating Bi₂Sr₂CaCu₂O₈₊ _x THz oscillator stack on-chip coupled to THz detector