Size dependence of band gaps in silicon nanostructures

Delley, B.; Steigmeier, E. F.

doi:10.1063/1.114348

Cited by 294 publications

(204 citation statements)

References 19 publications

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“…29 The latter result is further supported by calculated mean sizes from theoretical correlations. 28 The PL decay times, , of species a were obtained from tri-exponential decay fittings of the PL traces detected at 450 nm upon 388 nm excitation (see in Table 1 These observations agree satisfactorily with reported cytotoxicity studies of SiNPs with surface attached amino groups. 33 Since in aqueous media of pH 7-8 both, PA-FeSiNPs and SiO x -Fe-SiNPs are positively charged, it is suggested that the nature of the charge, -NH 3 + vs Fe-OH 2 + is a contributing factor to the differential cell toxicity.…”

Section: Silicon Nanoaparticles Characterization: the Analysis Of Thesupporting

confidence: 72%

“…28 exhibit more intense PL than larger ones. 29 The latter result is further supported by calculated mean sizes from theoretical correlations.…”

Section: Silicon Nanoaparticles Characterization: the Analysis Of Thementioning

confidence: 99%

“….55 (± 0.1) 0.5 (± 0.14) and decay times () of the contributing species to the overall emission of the particles suspensions obtained at 298 K. D stands for the average diameter of the particles as predicted from theoretical correlations according to the work of Delley et al 28 ND stands for "not determined".…”

Section: Silicon Nanoaparticles Characterization: the Analysis Of Thementioning

confidence: 99%

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Impact of Iron Incorporation on 2–4 nm Size Silicon Nanoparticles Properties

et al. 2015

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Iron-containing silicon nanoparticles were synthesized in an attempt to understand the effect of iron on the silicon nanoparticle (SiNP) photoluminescence and singletoxygen generation capacity. A wet chemical oxidation procedure of the sodium silicide precursor, obtained from the thermal treatment in anaerobic conditions of a mixture of sodium, silicon, and an iron (III) organic salt under anaerobic conditions, was employed. Surface-oxidized and propylamine-terminated SiNPs were characterized using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, time-resolved and steady-state photoluminescence, and time-correlated fluorescence anisotropy. Based on differences in the morphology, crystal structure, density, and photoluminescence spectrum, two distinct types of SiNPs were identified in a given synthesis batch: iron-free and iron-containing SiNPs. The results show that iron is inhomogeneously incorporated in the SiNPs leading to an efficient photoluminescence quenching. Emission arrives mainly from 2 nm size iron-free SiNPs.The nanoparticles were shown to generate singlet oxygen ( 1 O 2 ) upon 355 nm irradiation, though they were able to quench 1 O 2 . Analysis of cytotoxicity using MTT assay on rat glioma C6 cells showed a strong dependence on the nature of the surface groups, as 100 g/ml of propylamine-terminated iron-containing SiNPs leads to 85% decrease in cell viability while equal amounts of surface oxidized particles induced a 35% of cell death.

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Section: Silicon Nanoaparticles Characterization: the Analysis Of Thesupporting

confidence: 72%

“…28 exhibit more intense PL than larger ones. 29 The latter result is further supported by calculated mean sizes from theoretical correlations.…”

Section: Silicon Nanoaparticles Characterization: the Analysis Of Thementioning

confidence: 99%

Section: Silicon Nanoaparticles Characterization: the Analysis Of Thementioning

confidence: 99%

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Impact of Iron Incorporation on 2–4 nm Size Silicon Nanoparticles Properties

et al. 2015

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“…Figures quoted for quantum efficiency are typically around 5%. 2 There are now a large number of groups working on many aspects of porous silicon, from fundamental theory [3][4][5] to the production of prototype luminescent devices. [6][7][8] However, the recognized instability of the material may suggest that it is perhaps less suitable for general device use than was originally thought.…”

Section: Introductionmentioning

confidence: 99%

The origin of photoluminescence from thin films of silicon-rich silica

Kenyon

Trwoga

Pitt

et al. 1996

Journal of Applied Physics

206

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We have carried out a study of the photoluminescence properties of silicon-rich silica. A series of films grown using plasma enhanced chemical vapor deposition over a range of growth conditions were annealed under argon at selected temperatures. Photoluminescence spectra were measured for each film at room temperature and for selected films at cryogenic temperatures. The photoluminescence spectra exhibit two bands. Fourier transform infrared and electron spin resonance spectroscopies were used to investigate bonding and defect states within the films. The data obtained strongly suggest the presence of two luminescence mechanisms which exhibit different dependencies on film growth conditions and postprocessing. We make assignments of the two mechanisms as ͑1͒ defect luminescence associated with oxygen vacancies and ͑2͒ radiative recombination of electron-hole pairs confined within nanometer-size silicon clusters ͑''quantum confinement''͒.

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“…While it has been extensively demonstrated that in H-terminated SiNWs quantum confinement induces a gap-broadening effect [11,12,13], little is known about surface reconstruction of nonpassivated wires and about their electronic structure. Theoretical studies of the structure of the thinnest possible SiNW [14,15] have been previously published.…”

mentioning

confidence: 99%

Metallic and Semimetallic Silicon⟨100⟩Nanowires

2005

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Silicon nanowires grown along the 100 -direction with a bulk Si core are studied with density functional calculations. Two surface reconstructions prevail after exploration of a large fraction of the phase space of nanowire reconstructions. Despite their energetical equivalence, one of the reconstructions is found to be strongly metallic while the other one is semi-metallic. This electronicstructure behavior is dictated by the particular surface states of each reconstruction. These results imply that doping is not required in order to obtain good conducting Si nanowires.

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Size dependence of band gaps in silicon nanostructures

Cited by 294 publications

References 19 publications

Impact of Iron Incorporation on 2–4 nm Size Silicon Nanoparticles Properties

Impact of Iron Incorporation on 2–4 nm Size Silicon Nanoparticles Properties

The origin of photoluminescence from thin films of silicon-rich silica

Metallic and Semimetallic Silicon⟨100⟩Nanowires

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