Size dependence effective band gap in GaSb nano-solid

Diwan, Bhoopendra Dhar; Dubey, Vinod Kumar

doi:10.1063/1.4810209

Cited by 3 publications

(2 citation statements)

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“…To determine the effective band gap of semiconductor materials we incorporate the effect of kinetic energy, coulomb interaction and correlation effect in band gap of bulk material. In the present study, we consider the simplest model calculation based on the effective-mass approximation that predicts the effective band gap energy for nano-wire due to three-dimensional confinement comparing to the bulk one as [18][19]. The effective band gap energy ( ' g E ) for nano-wire is given by ( ) ( )…”

Section: Methods Of Computationmentioning

confidence: 99%

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Influence of Size on Effective Band Gap of Silicon Nano-Wire

Diwan

Dubey²

2014

AMR

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In this article, the effect of wire-size on the effective band gap of Silicon (Si) is analyzed. The band gap is one of the most significant electronic parameters of semiconductor material. The band gap of semiconductor depends on temperature, pressure, composition, number of atoms as well as on the size of the particle. When semiconductors are synthesized at nanoscale level, their small particle size gives rise to quantum confinement and the energy bands are split into discrete levels. It is observed that effective band gap of semi-conductor depends on the size of the wire (number of atoms and dimensions) and it increases by decreasing the size of Si nanowire. The size quantization effect is noticed as a shift of the effective band gap toward lower values with increasing temperature of Si nanowire which also shows increase in atomic vibrations. Keywords: Size effect; Energy band gap; Semiconductor, effective mass; nanowire.

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Section: Methods Of Computationmentioning

confidence: 99%

“…Cho et al [17] have studied the electronic structure of silicon nano-crystals embedded in a silicon nitride insulating film is identified by using a capacitance spectroscopy. Diwan et al [18] have studied the size dependence effective band gap of GaSb nano-solids using simple model calculation.…”

Section: Introductionmentioning

confidence: 99%

Influence of Size on Effective Band Gap of Silicon Nano-Wire

Diwan

Dubey²

2014

AMR

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Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

Datta

Kanjilal

Satpati

et al. 2014

Journal of Applied Physics

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Room temperature implantation of 60 keV Ar+-ions in GaSb to the fluences of 7 × 1016 to 3 × 1018 ions cm−2 is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.

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Photoresponse investigation of polycrystalline gallium antimonide (GaSb) thin films

Shafa

Pan

Kumar³

et al. 2020

AIP Advances

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Thin films of polycrystalline gallium antimonide (GaSb) were grown on widely available mica substrates using the physical vapor deposition method. The as-grown films contain grains of nano-scale with regular symmetries, as identified by x-ray diffraction and scanning electron microscope analysis. Two-terminal devices with coplanar electrodes were fabricated from the polycrystalline GaSb films; thus, the time dependent photoresponse property of the films was investigated by measuring the current density–voltage characteristics of devices. A significant photoresponse of the device was revealed by the linear dependence of the applied bias. Additionally, the transient behavior of the GaSb thin films was used to optimize growth temperatures of the films. This study shows that polycrystalline GaSb thin films on mica at 500 °C are suitable for high photoresponse and low noise IR photodetectors, thus proving to be a low cost solution for IR photodetectors.

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Size dependence effective band gap in GaSb nano-solid

Cited by 3 publications

References 0 publications

Influence of Size on Effective Band Gap of Silicon Nano-Wire

Influence of Size on Effective Band Gap of Silicon Nano-Wire

Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

Photoresponse investigation of polycrystalline gallium antimonide (GaSb) thin films

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