Nanoscale Au-ZnO heterostructures were fabricated on 4-in. SiO 2 /Si wafers by the atomic layer deposition (ALD) technique. Developed Au-ZnO heterostructures after post-deposition annealing at 250°C were tested for amperometric hydrogen peroxide (H 2 O 2) detection. The surface morphology and nanostructure of Au-ZnO heterostructures were examined by field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), etc. Additionally, the electrochemical behavior of Au-ZnO heterostructures towards H 2 O 2 sensing under various conditions is assessed by chronoamperometry and electrochemical impedance spectroscopy (EIS). The results showed that ALD-fabricated Au-ZnO heterostructures exhibited one of the highest sensitivities of 0.53 μA μM −1 cm −2 , the widest linear H 2 O 2 detection range of 1.0 μM-120 mM, a low limit of detection (LOD) of 0.78 μM, excellent selectivity under the normal operation conditions, and great long-term stability. Utilization of the ALD deposition method opens up a unique opportunity for the improvement of the various capabilities of the devices based on Au-ZnO heterostructures for amperometric detection of different chemicals.