Size‐ and Interface‐Modulated Metal–Insulator Transition in Solution‐Synthesized Nanoscale VO₂‐TiO₂‐VO₂ Heterostructures

Abstract

The M1 form of vanadium dioxide, which exhibits a reversible insulator–metal transition above room temperature, has been incorporated into nanoscale heterostructures through solution‐phase epitaxial growth on the tips of rutile TiO2 nanorods. Four distinct classes of VO2‐TiO2‐VO2 nanorod heterostructures are accessible by modulating the growth conditions. Each type of VO2‐TiO2‐VO2 nanostructure has a different insulator–metal transition temperature that depends on the VO2 domain sizes and the TiO2‐VO2 interfacial strain characteristics.

Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition

“…As a result, the high quality VO 2 film preparation is still a focusing point and essential issue. Many previous experiments have been reported about the VO 2 epitaxial film growth on various substrates such as c-plane sapphire [7,8,9], TiO 2 [10,11], GaN [12] and ordinary quartz glass [13], directly or with a buffer layer [14,15], For instance, Wang et al deposited VO 2 film on p-GaN/Al 2 O 3 (0001) substrate and explored the heterojunction devices. The growth of VO 2 films on the ZnO/glass substrate provided a new research direction for the application of electronically controlled smart windows [16].…”