Size and distribution of Te inclusions in THM as-grown CZT wafers: The effect of the rate of crystal cooling

Roy, Utpal; Weiler, S.; Stein, J.; Hossain, Anwar; Camarda, G. S.; Bolotnikov, A. E.; James, R. B.

doi:10.1016/j.jcrysgro.2011.07.025

Cited by 29 publications

(15 citation statements)

References 25 publications

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“…[1][2][3][4] Unfortunately, these materials tend to have nonuniform properties, resulting in both limited performance and high material cost (arising from a low yield of usable portions of ingots). 1 The nonuniformity properties have been attributed to such defects as Te particles 5,6 and dislocation networks. 1,[7][8][9][10][11] Previous efforts to improve the materials have focused on reducing Te particles, but little work has focused on dislocation network structures.…”

Section: Introductionmentioning

confidence: 99%

Analytical bond-order potential for the Cd-Zn-Te ternary system

et al. 2012

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Cd-Zn-Te ternary alloyed semiconductor compounds are key materials in radiation detection and photovoltaic applications. Currently, crystalline defects such as dislocations limit the performance of these materials. Atomistic simulations are a powerful method for exploring crystalline defects at a resolution unattainable by experimental techniques. To enable accurate atomistic simulations of defects in the Cd-Zn-Te systems, we develop a full Cd-Zn-Te ternary bond-order potential. This Cd-Zn-Te potential has numerous unique advantages over other potential formulations: (1) It is analytically derived from quantum mechanical theories and is therefore more likely to be transferable to environments that are not explicitly tested. (2) A variety of elemental and compound configurations (with coordination varying from 1 to 12) including small clusters, bulk lattices, defects, and surfaces are explicitly considered during parameterization. As a result, the potential captures structural and property trends close to those seen in experiments and quantum mechanical calculations and provides a good description of melting temperature, defect characteristics, and surface reconstructions. (3) Most importantly, this potential is validated to correctly predict the crystalline growth of the ground-state structures for Cd, Zn, Te elements as well as CdTe, ZnTe, and Cd 1−x Zn x Te compounds during highly challenging molecular dynamics vapor deposition simulations.

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Section: Introductionmentioning

confidence: 99%

Analytical bond-order potential for the Cd-Zn-Te ternary system

et al. 2012

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“…The performance of the material is critically dependent on the presence of extended defects such as dislocations and grain boundaries and second phases, particularly tellurium precipitates and inclusions [3][4][5]. Vapour phase growth, by virtue of its lower temperatures and potential for greater control of the growth process, is able to address these problems and, by avoiding the use of a melt, should avoid the generation of tellurium inclusions.…”

Section: Introductionmentioning

confidence: 99%

Growth by the Multi-tube Physical Vapour Transport method and characterisation of bulk (Cd,Zn)Te

Choubey

Veeramani

Pym

et al. 2012

Journal of Crystal Growth

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“…The resistivity of the as-grown ingots varied between1 and 3 Â 10 10 O cm. The average concentration of Te inclusions/precipitations of the as-grown ingots found to be $1 Â 10 5 cm À 3 [19]. The as-grown crystals showed excellent charge transport characteristics with electron mobility of about 960 cm 2 /V sec and mt for electron about 9 Â 10 À 3 cm 2 /V at room temperature for 5 mm thick samples [20].…”

Section: Resultsmentioning

confidence: 92%