Site Selective Copper and Silver Electroless Metallization Facilitated by a Photolithographically Patterned Hydrogen Silsesquioxane Mediated Seed Layer

Harkness, Brian R.; Rudolph, Michael F.; Takeuchi, Kasumi

doi:10.1021/cm010373e

Cited by 12 publications

(8 citation statements)

References 10 publications

(20 reference statements)

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“…13 The silicon hydride (Si-H) bonds are scissioned to form silanols (Si-OH) in the presence of absorbed moisture within the film. 13,14,18 Hydrogen silsesquioxane has been widely used as an electron beam resist in many applications, including the fabrication of MOSFET gates with critical dimensions of Ͻ30 nm and aspect ratios of 13, 19,20 etching masks in bilayer lithographic processes, 15,21 templates for selective electroless copper and silver metal deposition onto nonconductive surfaces, 22 and imprinting templates for step and flash imprint lithography. 13,14,18 Hydrogen silsesquioxane has been widely used as an electron beam resist in many applications, including the fabrication of MOSFET gates with critical dimensions of Ͻ30 nm and aspect ratios of 13, 19,20 etching masks in bilayer lithographic processes, 15,21 templates for selective electroless copper and silver metal deposition onto nonconductive surfaces, 22 and imprinting templates for step and flash imprint lithography.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography

Junarsa¹,

Stoykovich²,

Nealey³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inNovel negative-tone molecular resist based on polyphenol derivative for extreme ultraviolet lithography Extreme ultraviolet lithography based nanofabrication using a bilevel photoresist Hydrogen silsesquioxane (HSQ) was evaluated as a high resolution negative-tone photoresist for extreme ultraviolet (EUV) lithography. The following imaging properties of HSQ were evaluated in EUV exposure: sensitivity, contrast, resolution, and line edge roughness (LER). In this article we report that HSQ has a sensitivity of 11.5 mJ/ cm 2 with a contrast of 1.64 in EUV exposure and is able to resolve 26 nm dense lines (70 nm thick film) with a LER of 5.1 nm ͑3͒. These results, especially with regard to the sensitivity and low line edge roughness, imply that this class of materials may hold distinct advantages over traditional chemically amplified resists and should be further explored for application in EUV lithography.

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Section: Introductionmentioning

confidence: 99%

Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography

Junarsa¹,

Stoykovich²,

Nealey³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…Electronic mail: nealey@engr.wisc.edu HSQ has been widely used in many applications such as the fabrication of templates for selective electroless copper and silver metal deposition onto non-conductive surfaces, 18 metal-oxide-semiconductor field-effect transistor gates with critical dimensions of Ͻ30 nm and aspect ratios of 13, 19,20 etching masks in bilayer lithographic processes, 21,22 and imprinting masters for SFIL. 10 High-resolution structures with sub-25 nm dimensions have been resolved in HSQ using electron beam 13,14 and EUV lithography.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of masters for nanoimprint, step and flash, and soft lithography using hydrogen silsesquioxane and x-ray lithography

Junarsa

Nealey

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A technique for fabricating masters for nanoimprint lithography, step and flash lithography, and soft lithography has been demonstrated through direct patterning of hydrogen silsesquioxane (HSQ) using x-ray lithography. Patterns that are replicated by nanoimprint, step and flash, and other soft lithographic strategies are often originally written on masters with electron beam lithography. In this article we demonstrate that if the original pattern is written with electron beam lithography to make an x-ray mask, then masters with very well-defined three-dimensional relief structures can be easily produced by direct patterning of hydrogen silsesquioxane using x-ray lithography. Direct patterning of HSQ eliminates silicon or oxide etches associated with the current fabrication techniques, providing better critical dimension and aspect ratio control of the structures on the masters. A low surface energy release agent, tridecafluoro-1,1,2,2-tetrahydrooctyl trichlorosilane, can also be applied onto the patterned HSQ to prevent the imprinted substrates from sticking to the masters. Thousands of masters can be produced from a single x-ray mask, and the x-ray mask pattern can be stepped to make large masters from a single small patterned area on the x-ray mask. The HSQ masters were successfully applied to imprint structures onto a polymeric resist substrate and poly(dimethylsiloxane).

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“…Hidber et al 12 utilized microcontact stamping to pattern palladium (Pd) colloids which yielded copper (Cu) patterns aer ELP. Harkness et al 13 used photolithography to pattern a Pd-bonded-organic seed layer (hydrogen silsesquioxane) and achieved site selective ELP of Cu and Ag. The prohibitively large cost of photolithography has prompted research into the use of inkjet printing to directly pattern the catalyst.…”

mentioning

confidence: 99%

Fabrication of highly electrically conducting fine patterns via substrate-independent inkjet printing of mussel-inspired organic nano-material

Liu

Bromberg

et al. 2014

J. Mater. Chem. C

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Site Selective Copper and Silver Electroless Metallization Facilitated by a Photolithographically Patterned Hydrogen Silsesquioxane Mediated Seed Layer

Cited by 12 publications

References 10 publications

Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography

Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography

Fabrication of masters for nanoimprint, step and flash, and soft lithography using hydrogen silsesquioxane and x-ray lithography

Fabrication of highly electrically conducting fine patterns via substrate-independent inkjet printing of mussel-inspired organic nano-material

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