Site‐Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics

Zhang, Linfei; Liu, Jiefeng; Li, Junzi; Wang, Zhuo; Wang, Yingwei; Ge, Yanqi; Dong, Weilong; Xu, Ning; He, Tiancheng; Zhang, Han; Zhang, Wenjing

doi:10.1002/lpor.201900409

Cited by 55 publications

(19 citation statements)

References 53 publications

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“…Furthermore, the Bi dopant is helpful to improve NLO response because it can efficiently accelerate charge transfer at the interface. This charge transfer can be used to understand the optical physics process and improve the electron transfer efficiency in vdW heterostructures such as Bi 2 Te 3 / FeTe 2 [47] and Graphene/MoS 2 . [7]…”

Section: Mechanism For Improved Nlo Properties Of Bi 2 S 3 /Res 2 Filmmentioning

confidence: 99%

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Luo

Yang

et al. 2021

Adv Materials Inter

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and modulation depth (MoS 2 ≈ 12.7%) [7] in the early time. Different from group-VI TMDs, ReS 2 as a group-VII TMDs is a direct bandgap (≈1.5 eV) semiconductor in both monolayer and bulk crystal. [8] Meanwhile, ReS 2 demonstrates high stability, reasonable carrier mobility (≈30 cm 2 •V −1 s −1 ), [9] and high current on/ off ratio (≈10 6 ). [8] However, ReS 2 shows poor NLO response such as low SA coefficients (−5.99 cm GW −1 ) [1] and modulation depth (≈3%), [10] which severely hinders its application in ultrafast laser. [6,11] Recently, some 2D ReS 2 based van der Waals (vdW) heterostructures such as ReS 2 /MoS 2 , [12] ReS 2 /ReSe 2 , [13] ReS 2 /WSe 2 , [14] and ReS 2 / Graphene [15] have been constructed to improve linear optoelectronic devices [16] such as photodetectors, field-effect transistors, and solar cells, owing to their synergistic effect in the heterostructures. However, few NLO experiments have been demonstrated in ReS 2 based heterostructures. The influence of band alignment on NLO response still need to be unveiled.Bi 2 S 3 can be an elementary component for vdW heterostructure due to its high figure of merit (FOM ≈6.17 × 10 −14 esu cm), [17] environmental stability, excellent absorption coefficient (≈10 5 cm −1 ), [18] and tunable bandgap (from 1.28 to 1.84 eV [19][20] ). Furthermore, Bi 2 S 3 demonstrates relatively high SA coefficient (−63.38 cm GW −1 ) [17] and modulation depth (≈5.7%). [21] Complementarity in Bi 2 S 3 and ReS 2 would promise the heterostructure of Bi 2 S 3 and ReS 2 for "one plus one greater than two" NLO properties. Unlike traditional bonded heterostructures, these 2D vdW heterostructures can be easily integrated without lattice-matching limitation. [22] However, most vdW heterostructures are constructed by mechanical stacking or physical transfer process, which are not scalable for practical applications. [23] Besides, early methods may result in uncontrollable stacking orientation and unavoidable contamination in the transfer process. [24] Some recent reports of two-step vdW vapor epitaxial growth provide an opportunity towards scalable integration of 2D materials. [25,26] Importantly, the vdW vapor epitaxial growth shows the advantages: (I) efficient control in size and convenient growth in scale; (II) atomic uniformity at the interface; (III) layer-by-layer formation without alloys; (IV) compatibility with the current industrial technology. Even though Sb 2 Se 3 /WS 2 , [27] Bi 2 S 3 /MoS 2 , [28] and SnSe 2 /MoS 2 [24] have been successfully demonstrated by vdW vapor epitaxial growth, there is no report on the Bi 2 S 3 /ReS 2 , to our best knowledge. 2D van der Waals (vdW) heterostructure provides a novel platform to modulate linear and nonlinear optical (NLO) properties for optical devices by interface engineering. However, NLO properties and mechanisms based on vdW heterostructures are far from complete understanding. Herein, two-step vdW vapor epitaxial growth by either physical or chemical vapor deposition methods is successfully demonstrated to synthesize unifor...

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Section: Mechanism For Improved Nlo Properties Of Bi 2 S 3 /Res 2 Filmmentioning

confidence: 99%

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Luo

Yang

et al. 2021

Adv Materials Inter

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“…The resulting A s and I sat of the polymer solution were ∼32.43% and ∼84.6 GWcm ‐2 , respectively. The A s of polymer solution was even larger compared with many saturable absorption materials, such as black phosphorus and MoS 2 , [21] and Bi 2 Te 3 −FeTe 2 nanoplates [22] . Therefore, our polymer may be a promising saturable absorber for laser Q‐switching or mode‐locking.…”

Section: Resultsmentioning

confidence: 98%

Large Nonlinear Optical Activity of a Near‐infrared‐absorbing Bithiophene‐based Polymer with a Head‐to‐head Linkage

Ren

Xiao

et al. 2021

Chemistry An Asian Journal

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Although the production of near‐infrared (NIR)‐absorbing organic polymers with an excellent nonlinear optical (NLO) response is vital for various optoelectronic devices and photodynamic therapy, the molecular design and relevant photophysical investigation still remain challenging. In this work, large NLO activity is observed for an NIR‐absorbing bithiophene‐based polymer with a unique head‐to‐head linkage in the NIR region. The saturable absorption coefficient and modulation depth of the polymer are determined as ∼−3.5×105 cm GW−1 and ∼32.43%, respectively. Notably, the polymer exhibits an intrinsic nonlinear refraction index up to ∼−9.36 cm2 GW−1, which is six orders of magnitude larger than that of CS2. The maximum molar‐mass normalized two‐photon absorption cross‐section (σ2/M) of this polymer can be up to ∼14 GM at 1200 nm. Femtosecond transient absorption measurements reveal significant spectral overlap between the 2PA and excited state absorption in the 1000–1400 nm wavelength range and an efficient triplet quantum yield of ∼36.7%. The results of this study imply that this NIR‐absorbing polymer is promising for relevant applications.

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“…В настоящее время ТИ являются перспективными материалами для применений в различных областях физики. В фотонике Bi 2 Te 3 применяется для пассивной синхронизации сверхскоростных оптоволоконных лазеров в системах оптической связи [5,6]. В спинтронике операция преобразования между спином и зарядом при комнатной температуре реализуется в ТИ на несколько порядков эффективнее, чем тяжелых металлах [7,8].…”

Section: Introductionunclassified

Дефекты межслоевой поверхности и термоэлектрические свойства в слоистых пленках топологических изоляторов n-Bi-=SUB=-2-=/SUB=-Te-=SUB=-2.7-=/SUB=-Se-=SUB=-0.15-=/SUB=-S-=SUB=-0.15-=/SUB=-

Лукьянова¹,

Усов²,

Волков³

et al. 2021

Физика Твердого Тела

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Interlayer surface defects and thermoelectric properties in layered films of n-Bi2Te2.7Se0.15S0.15 topological insulators L. N. Lukyanova*, O. A. Usov, M. P. Volkov, V. A. Rusakov Ioffe Institute Russian academy of science, 194021 St.Petersburg, Russia *E-mail: lidia.lukyanova@mail.ioffe.ru Abstract In layered films of n-Bi2Te2.7Se0.15S0.15 topological insulators optimized for temperatures below room temperature, the morphology of the (0001) interlayer surface and thermoelectric properties were studied. On the profiles of the (0001) surface, we identified neutral impurity defects arising from the substitution of Se and S atoms for Te atoms and donor antisite defects of tellurium at bismuth sites, which affect the thermoelectric properties. The average value of thermoelectric figure of merit in n-Bi2Te2.7Se0.15S0.15 films increases to <Z> ≈ 3.0•10-3 K-1 in the range 80 – 215 K, while in bulk solid solution <Z> ≈ 2.0•10-3 K-1. An increase in the thermoelectric figure of merit in films is associated with an increase in the energy dependence of the relaxation time due to an increase in the effective scattering parameter reff. It is shown that in films the Seebeck coefficient, the density of states effective mass m/m0, and the material parameter proportional to the power factor increase, while the lattice κL and electronic thermal conductivity κe decrease, which determines the increase in thermoelectric figure of merit.

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Site‐Selective Bi₂Te₃–FeTe₂ Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics

Cited by 55 publications

References 53 publications

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Large Nonlinear Optical Activity of a Near‐infrared‐absorbing Bithiophene‐based Polymer with a Head‐to‐head Linkage

Дефекты межслоевой поверхности и термоэлектрические свойства в слоистых пленках топологических изоляторов n-Bi-=SUB=-2-=/SUB=-Te-=SUB=-2.7-=/SUB=-Se-=SUB=-0.15-=/SUB=-S-=SUB=-0.15-=/SUB=-

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Site‐Selective Bi2Te3–FeTe2 Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics

Cited by 55 publications

References 53 publications

Facile Two‐Step van der Waals Epitaxial Growth of Bi2S3/ReS2 Heterostructure with Improved Saturable Absorption

Facile Two‐Step van der Waals Epitaxial Growth of Bi2S3/ReS2 Heterostructure with Improved Saturable Absorption

Large Nonlinear Optical Activity of a Near‐infrared‐absorbing Bithiophene‐based Polymer with a Head‐to‐head Linkage

Дефекты межслоевой поверхности и термоэлектрические свойства в слоистых пленках топологических изоляторов n-Bi-=SUB=-2-=/SUB=-Te-=SUB=-2.7-=/SUB=-Se-=SUB=-0.15-=/SUB=-S-=SUB=-0.15-=/SUB=-

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Site‐Selective Bi₂Te₃–FeTe₂ Heterostructure as a Broadband Saturable Absorber for Ultrafast Photonics

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption