Site preference and diffusion behaviors of H influenced by the implanted-He in 3C-β SiC

Wang, Sen; He, Hong; Ding, Rui; Chen, J.L.; Pan, Bicai

doi:10.1016/j.jallcom.2018.01.285

Journal of Alloys and Compounds

2018

DOI: 10.1016/j.jallcom.2018.01.285

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Site preference and diffusion behaviors of H influenced by the implanted-He in 3C-β SiC

Sen Wang

Hong He

Rui Ding

et al.

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Cited by 5 publications

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Release behavior of an interstitial helium atom from 3C-SiC(100) subsurface: A first-principles study

Liang,

Tang,

Cheng

et al. 2024

Nuclear Instruments and Methods in Physics Research Section B:

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Site preference and diffusion behaviors of H influenced by the implanted-He in 3C-β SiC

Cited by 5 publications

References 40 publications

Release behavior of an interstitial helium atom from 3C-SiC(100) subsurface: A first-principles study

Release behavior of an interstitial helium atom from 3C-SiC(100) subsurface: A first-principles study

Effect of H and Pd atoms on the migration of He atoms in 3C–SiC

Hydrogen-promoted in-void diffusion of helium in a 3C-SiC(310) twin boundary: a first-principles study

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