Site Exchange of Ge and Sb on Si(100) during Surfactant-Mediated Epitaxial Growth

Structure and stability of the Si(001)c(4×4)-Sb surface

“…[1][2][3][4][5] In an effort to understand the role of such adsorbates, several experimental [6][7][8][9] and theoretical 10 studies of Sb adsorption on Si͑001͒ have already appeared in the literature. The general conclusions of these studies is that the deposition of a ML of Sb over a range of substrate temperatures lifts the wellknown Si(001)-(2ϫ1) asymmetric dimer reconstruction and forms a (2ϫ1) structure of symmetric Sb-Sb dimers on top of near bulklike silicon.…”

Ultra-low-temperature homoepitaxial growth of Sb-doped silicon

“…Of these dopants, Sb is the most commonly used and has a lower surface segregation than P and As. The interaction of Sb with the silicon surface is a subject of great interest and much debate, and has been widely studied for growth of germanium and Si x Ge 1Àx as well as silicon [7][8][9][10]. At moderate temperatures, Sb acts as a surfactant and at low temperatures, Sb can be incorporated as an n-type dopant.…”

Ab initio study of the one-monolayer Sb/Si(001) interface

“…Adsorption of antimony and arsenic on silicon surfaces has been the subject of great interest theoretically and experimentally because of their importance both as dopants and surfactants [1][2][3]. Due to their similar electronic structure, both of them exhibit 2 Â 1 symmetric dimer reconstruction at monolayer coverage adsorption on Si(0 0 1).…”