Site effect on the impurity levels in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mn>5</mml:mn><mml:mi>R</mml:mi></mml:math>SiC

Ikeda, M.; Matsunami, Hiroyuki; Tanaka, Tetsuro

doi:10.1103/physrevb.22.2842

Cited by 321 publications

(154 citation statements)

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“…Compared to the typical N-Al donor-acceptor-pair (DAP) emission in 6H-SiC, this new band is much broader and shows a large shift of about 0.19 eV lower than the maximum of the N-Al DAP emission band. 16 Thus, this emission band does not originate from N-Al DAP emission. More probably it comes from unidentified defects rather than specific doping species.…”

Section: Resultsmentioning

confidence: 99%

“…The excitonic energies associated with the radiative recombinations at these SFs were found at E gx1 ¼ 2.837, E gx2 ¼ 2.689, E gx3 ¼ 2.600, and E gx4 ¼ 2.525 eV, respectively. In the same part where LTPL was performed, HR-TEM results showed that different types of SFs can be recognized as SFs (3,4), (3,5), (3,6), (3,7), (3,9), (3,11), (3,16), and (3,22), respectively. Moreover, a faulted region with 8H-SiC like sequence of (4,4) was also observed by TEM in the same area.…”

Section: Discussionmentioning

confidence: 99%

“…As seen in Fig. 6, SFs (3,11), (3,16), (3,22) contain thicker 3C-SiC lamellas. In Table I, we summarize all the SFs observed from HR-TEM images.…”

Section: B Hr-tem Images Of Stacking Faultsmentioning

confidence: 90%

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Shockley-Frank stacking faults in 6H-SiC

Sun

Robert

Andreadou

et al. 2012

Journal of Applied Physics

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Effect of stacking fault and temperature on deformation behaviors of nanocrystalline Mg J. Appl. Phys. 112, 054322 (2012) Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers Appl. Phys. Lett. 101, 112102 (2012) Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN J. Appl. Phys. 112, 053512 (2012) Ruddlesden-Popper faults in LaNiO3/LaAlO3 superlattices J. Appl. Phys. 112, 013509 (2012) Optical and structural studies of homoepitaxially grown m-plane GaN Appl. Phys. Lett. 100, 172108 (2012) Additional information on J. Appl. Phys. We report on Shockley-Frank stacking faults (SFs) identified in 6H-SiC by a combination of low temperature photoluminescence (LTPL) and high resolution transmission electron microscopy (TEM). In the faulted area, stacking faults manifested as large photoluminescence emissions bands located in between the 6H-SiC signal (at $2.99 eV) and the 3C-SiC bulk-like one (at $2.39 eV). Each of the stacking fault related emission band had a four-fold structure coming from the TA, LA, TO, and LO phonon modes of 3C-SiC. Up to four different faults, with four different thickness of the 3C-SiC lamella, could be observed simultaneously within the extent of the laser excitation spot. From the energy of the momentum-conservative phonons, they were associated with excitonic energy gaps at E gx1 ¼ 2.837 eV, E gx2 ¼ 2.689 eV, E gx3 ¼ 2.600 eV and E gx4 ¼ 2.525 eV. In the same part where low temperature photoluminescence was performed, high resolution transmission electron microscopy measurements revealed stacking faults which, in terms of the Zhdanov notation, could be recognized as SFs (3, 4), (3,5), (3, 6), (3, 7), (3, 9), (3, 11), (3, 16) and (3, 22), respectively. Among them stacking fault (3, 4) was the most common one, but a faulted region with a (4, 4) 8H-SiC like sequence was also found. Using a type II 6H/3C/6H quantum-well model and comparing with experimental results, we find that the photoluminescence emissions with excitonic band gaps at 2.837 eV (E gx1 ), 2.689 eV (E gx2 ), 2.600 eV (E gx3 ) and 2.525 eV (E gx4 ) come from SFs (3, 4), (3, 5), (3, 6) and (3, 7), respectively. A possible formation mechanism of these SFs is suggested, which involves a combination of Frank faults with Shockley ones. This provides a basic understanding of stacking faults in 6H-SiC and gives a rapid and non-destructive approach to identify SFs by low temperature photoluminescence. V C 2012 American Institute of Physics.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Shockley-Frank stacking faults in 6H-SiC

Sun

Robert

Andreadou

et al. 2012

Journal of Applied Physics

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“…Nitrogen (N) is usually used as an n-type doping impurity for SiC because of its low donor level. 19) In situ N doping by simultaneously supplying NH 3 is often used for the formation of n-type SiC thin films. 20,21) It is not yet clear whether an in situ doping technique using vinylsilane and NH 3 additional gas will be effective.…”

Section: Introductionmentioning

confidence: 99%

Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor

Doi

Takeuchi

Jin

et al. 2017

Jpn. J. Appl. Phys.

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We have examined the formation of SiC thin films by chemical vapor deposition (CVD) using vinylsilane and investigated the chemical bonding state and crystallinity of the prepared SiC thin films. We achieved the formation of a Si-H-less SiC film at growth temperatures as low as 600 °C. Also, we investigated the in situ doping effect of N by the incorporation of NH 3 gas in the SiC growth and demonstrated that the chemical composition of N in SiC thin films was controlled by adjusting the NH 3 flow rate. In addition, we examined the growth of SiC thin films on a Cu substrate and achieved the formation of a SiC thin film while avoiding any significant reaction between SiC and Cu at a growth temperature of 700 °C.

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“…For example, 4H-SiC has shallow donors (n-dopant), but lacks a shallow acceptor (p-dopant), the shallowest being aluminium with an ionization energy of 0.19 eV (Ikeda et al 1980). In the case of diamond, known dopants have even higher ionization energies.…”

Section: Introductionmentioning

confidence: 99%

Unlocking diamond's potential as an electronic material

Balmer

Friel

Woollard

et al. 2007

Phil. Trans. R. Soc. A.

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In this paper, we review the suitability of diamond as a semiconductor material for highperformance electronic applications. The current status of the manufacture of synthetic diamond is reviewed and assessed. In particular, we consider the quality of intrinsic material now available and the challenges in making doped structures suitable for practical devices. Two practical applications are considered in detail. First, the development of high-voltage switches capable of switching voltages in excess of 10 kV. Second, the development of diamond MESFETs for high-frequency and high-power applications. Here device data are reported showing a current density of more than 30 mA mm K1 along with small-signal RF measurements demonstrating gigahertz operation. We conclude by considering the remaining challenges which will need to be overcome if commercially attractive diamond electronic devices are to be manufactured.

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Site effect on the impurity levels in4H,6H, and15RSiC

Cited by 321 publications

References 36 publications

Shockley-Frank stacking faults in 6H-SiC

Shockley-Frank stacking faults in 6H-SiC

Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor

Unlocking diamond's potential as an electronic material

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