The formation of well-ordered chains of InP quantum dots on GaAs ͑001͒ substrates by using self-organized In 0.48 Ga 0.52 P surface undulations as a template is demonstrated. The ordering requires neither stacked layers of quantum dots nor substrate misorientation. The pronounced alignment of the InP quantum dots along ͓110͔ is driven by linear undulations in the surface material composition and strain in a In 0.48 Ga 0.52 P buffer layer. Although the In 0.48 Ga 0.52 P buffer layer is nearly perfectly lattice matched to the GaAs substrate on average, grazing incidence x-ray scattering indicates that the undulation regions are In rich. These regions of increased In content and consequent increased strain act as a template for subsequent InP quantum dot growth. When the buffer layer is grown at lower temperatures, the undulations do not form and the InP quantum dots show no ordering.