Site-controlled crystalline InN growth from the V-pits of a GaN substrate

Kuo, Cheng-Tzu; Hsu, Lewis; Lai, Yung Yu; Cheng, Shan Yun; Kuo, Hao‐Chung; Lin, Chien-Chung; Cheng, Yuh Jen

doi:10.1016/j.apsusc.2017.02.042

Cited by 10 publications

(7 citation statements)

References 30 publications

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Section: Introductionmentioning

confidence: 99%

“…Among various methods involving formation of self-assembled ordered quantum dots during epitaxial growth of thin films, a very successful one is that of growth of coherently strained thin films on pit-patterned substrate surfaces [15][16][17][18]. This method of formation of ordered nanostructures has been studied experimentally for various semiconductor heteroepitaxial film/substrate systems such as Ge/Si [15][16][17], InN/ GaN [18], InAs/GaAs [19], and Ge/Si 3 N 4 [20]. These experimental studies have reported nucleation of ordered nanostructures, such as periodic patterns of one or more quantum dots forming inside the pits [16,17,19] and nanoring-like structures forming at the rims of the pits [15,16,18,20].…”

Section: Introductionmentioning

confidence: 99%

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Modeling of quantum dot and nanoring pattern formation on pit-patterned semiconductor substrates

Kumar¹,

Du²,

Maroudas³

2018

Mater. Res. Express

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We develop a properly parameterized, three-dimensional continuum-scale kinetic model for monitoring the surface morphological evolution of coherently strained heteroepitaxial thin films that captures the morphological response of epitaxially grown Ge thin films on pit-patterned Si{100} substrates. The model accounts for curvature-driven atomic diffusion on the film surface, biaxial lattice misfit strain in the film, and the wetting potential between the film and the substrate. Selfconsistent dynamical simulations based on our model show formation of complex nanostructures on the epitaxial film surface, including nanorings at the rims of pits, a single quantum dot at the center of a pit, as well as multiple quantum dots inside pits with rectangular openings, consistent with experimentally observed nanostructures. Our simulation results reproduce the variation in the formed nanostructural features observed experimentally by properly varying the key experimental parameters, namely, the pit size and the pit geometry. Our study sets the stage for designing systematic experimental protocols toward precise control of complex nanoring and quantum dot patterns forming on surfaces of epitaxially grown coherently strained semiconductor thin films.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling of quantum dot and nanoring pattern formation on pit-patterned semiconductor substrates

Kumar¹,

Du²,

Maroudas³

2018

Mater. Res. Express

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“…This was confirmed by the rocking curve for the InN (0002) reflection (Figure 1b) with a full width at half maximum (FWHM) of ~0.284° (1022 arcs). This value is by far better than those reported in the literature for MOVPE growth: 1800 arcs (at 550 °C) [30], 5601 arcs (at 550 °C) [14], 1300 arcs [31] and 0.27° (at 550 °C) obtained for c-oriented prismatic InN nanowalls grown on c-GaN/sapphire [32]. The dislocation density estimated from the rocking curve FWHM [33] showed a total (screw and edge) value of ~6 × 10 10 cm −3 .…”

Section: Resultsmentioning

confidence: 70%

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

et al. 2018

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In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.

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“…As the growth temperature of the InGaN QWs increased from 750 to 775 °C, the emission wavelength of the InGaN-based LEDs was shortened from 450 to 400 nm. Because the growth temperature of InN is lower than that of GaN due to the volatility of In 27 , the In content of the InGaN active layer is almost inversely proportional to the growth temperature. Moreover, it is known that the indium incorporation coefficient ( k In ) increases with decreasing growth temperature and increasing growth rate at a constant growth temperature 28,29 .…”

Section: Characterization Of Optical Properties and Crystallinity Of mentioning

confidence: 99%

High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel

Baek

Lee

2019

Sci Rep

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Flat-type InGaN-based light-emitting diodes (LEDs) without an n-type contact electrode were developed by using a local breakdown conductive channel (LBCC), and the effect of the In content of the InGaN quantum wells (QWs) on the local breakdown phenomenon was investigated. Electroluminescence and X-ray analyses demonstrated that the homogeneity and crystallinity of the InGaN QWs deteriorated as the In content of the InGaN QWs increased, thereby increasing the reverse leakage current and decreasing the breakdown voltage. After reverse breakdown with a reverse current of several mA, an LBCC was formed on the GaN-based LEDs. The surface size and anisotropic shape of the LBCC increased as the indium content of the InGaN QWs in the LEDs increased. Moreover, a flat-type InGaN LED without an n-type electrode was developed by using the LBCC. Notably, the resistance of the LBCC decreased with increasing indium content in the InGaN QWs, leading to lower resistance and higher light emission of the flat-type InGaN-based LEDs without an n-type contact electrode.

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Site-controlled crystalline InN growth from the V-pits of a GaN substrate

Cited by 10 publications

References 30 publications

Modeling of quantum dot and nanoring pattern formation on pit-patterned semiconductor substrates

Modeling of quantum dot and nanoring pattern formation on pit-patterned semiconductor substrates

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel

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