SiO2/SiN Multilayer-Stack Infrared Absorber Integrated on Pb(Zr0.4,Ti0.6)O3 Film Pyroelectric Sensors on γ-Al2O3/Si Substrate
Abstract:In this study, Pb(Zr 0.4 ,Ti 0.6 )O 3 (PZT) film pyroelectric infrared sensors were fabricated on a Si substrate with a SiO 2 /SiN multilayer-stack infrared (IR) absorber and characterized. Since an IR absorber is a critical element that determines the sensitivity of IR sensors, we have proposed a multilayer-stack IR absorber based on complementary metal-oxide-semiconductor (CMOS) compatible materials for the PZT film pyroelectric sensor. We designed and fabricated a SiO 2 /SiN multilayer-stack IR absorber tha… Show more
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