SiO2 based conductive bridging random access memory

Chen, W.; Tappertzhofen, Stefan; Barnaby, Hugh; Kozicki, Michael

doi:10.1007/s10832-017-0070-5

Cited by 40 publications

(30 citation statements)

References 169 publications

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“…The resistance changes of interest include both volatile and non-volatile behavior, as well as combinations of these responses [4][5][6]. Non-volatile resistive switching is observed in a broad range of transition metal oxides and the physical mechanisms responsible are reasonably well understood [7][8][9]. In contrast, reliable volatile switching is observed in far fewer oxides [10][11][12] and the understanding is less well advanced.…”

Section: Introductionmentioning

confidence: 99%

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO _x

Nath

Nandi

et al. 2020

Nanotechnology

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Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching under negative bias but to have a response under positive bias that depends on the choice of metal. Three distinct responses are highlighted: Devices with Nb and Ti top electrodes are shown to exhibit stable threshold switching with symmetric characteristics for both positive and negative polarities; devices with Cr top electrodes are shown to exhibit stable threshold switching but with asymmetric hysteresis windows under positive and negative polarities; and devices with Ta and Hf electrodes are shown to exhibit an integrated thresholdmemory (1S1M) response. Based on thermodynamic data and lumped element modelling these effects are attributed to the formation of a metal-oxide interlayer and its response to field-induced oxygen exchange. These results provide important insight into the physical origin of the switching response and pathways for engineering devices with reliable switching characteristics.

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Section: Introductionmentioning

confidence: 99%

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO _x

Nath

Nandi

et al. 2020

Nanotechnology

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“…Here we investigate the low-frequency noise properties of the most commonly exploited Ag nanofilaments [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39] by utilizing resistive switching devices operated in the metallic regime. The noise power spectral densities acquired in the presence of the surrounding Ag 2 S and AgI solid electrolytes are compared.…”

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confidence: 99%

Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

et al. 2019

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“…Special emphasis on conductive atomic force microscopy (c-AFM) as a tool to capture resistive switching processes in oxides is debated by Lanza, Celano and Miao [6]. Turning to understanding and designing oxide architectures Chen, Tappertzhofen, Barnaby and Kozicki explore the virtues of SiO 2 based conductive bridging random access memories and discuss insight into their memory array and neuromorphic computing applications [7]. Lian, Wang, Yan, Yang and Miao newly propose a criteria for selecting high-performance memristor materials based on the statistical results and the temperature evolution of conductive filaments with examples of TaO x , HfO 2 and NiO as resistive switching materials [8].…”

Section: Emulation Of Neural Network By Redox-based Resistivementioning

confidence: 99%

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

2017

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Emulation of neural networks by redox-based ResistiveRandom Access Memories (ReRAMs) with components such as thin films of ceramic materials are considered by the technological roadmap (ITRS) as a promising concept for the next generation non-volatile memory storage and as an important key towards computation with neuromorphic algorithms. ReRAMs are regarded as conceptually new building units in modern nanoelectronics, finding application not only as a memory, but also as selectors, for logic operations and neuromorphic computing circuits beyond the von Neumann concept, being capable of bio-inspired cognitive functions, such as machine learning and pattern recognition. The information is saved in ReRAMs as particular resistances of the devices adjustable by voltage stimuli, where in the most simple case the high resistive state represents the Boolean 0 and the low resistive state -the Boolean 1. The devices show outstanding potential for scaling down to the atomic level, integration, low-power consumption, sub-nanosecond operation time range and digital and/or analog volatile and/or non-volatile information storage. In these devices, the switching relies on redox reactions and mixed ionic-electronic transport at the nanoscale, in cells/devices of the type MEM (metal-electrolytemetal) or MIM (metal-insulator-metal) where oxides and higher chalcogenides are typically used as ion conducting materials. ReRAM devices are operated at extremely harsh conditions characterized by high electric fields (up to1 0 8 V/m) and extremely high current densities in the range above MA/cm 2 and show perspective for future memory and neuromorphic computing devices.In this special issue of the Journal of Electroceramics, we present a selection of invited and contributed articles, which focus on both materials and device aspects. These papers span a wide range reviewing and proposing materials for the switching oxides, including investigation of the switching mechanism, highlighting the involved nanionic processes and highlighting novel operation principles. We are fortunate to have attracted 16 high quality and timely contributions to this issue composed of invited reviews highlighting either material, probing or device aspects on the theme of this special issue.An invited review on resistive switching devices and their applications as mixed signal analog-digital neuromorphic computing architectures and other application fields by Zidan, Chen, Indiveri and Lu leads off the special issue [1]. In this paper, the development and opportunities of memristive switching devices for replacing classic binary transistors and potential computing architectures are discussed by the authors. Resistive switches offer the intrinsic ability of ready processing in 3D memory array architectures with exciting potential for mass storage applications and handling of big data. In a joint contribution lead by Chen et al. colleagues from Stanford,

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SiO2 based conductive bridging random access memory

Cited by 40 publications

References 169 publications

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO _x

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO _x

Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

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SiO2 based conductive bridging random access memory

Cited by 40 publications

References 169 publications

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO x

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO x

Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

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Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO _x

Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO _x