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           interfaces on high-index surfaces: Re-evaluation of trap densities and characterization of bonding structures

Ogata, Shigenobu; Ohno, Shinya; Tanaka, Masatoshi; Mori, Takahiro; Horikawa, Tsuyoshi; Yasuda, Tetsuji

doi:10.1063/1.3561741

Cited by 17 publications

(13 citation statements)

References 18 publications

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“…The remarkable orientation-independence of D it for Al 2 O 3 -passivated silicon surfaces, shown in Fig. 8.5, may be contrasted with the case of thermal SiO 2 , where D it is well known to be strongly dependent on substrate orientation [203]- [206]. Fig.…”

Section: Comparison To Siomentioning

confidence: 93%

“…Both the density of silicon atoms in the surface plane and the related density and angle of unsatisfied ("dangling") silicon bonds is different for each orientation, which can result in differences in the electrical properties of the silicon-dielectric interface. The best-known example of this is the interface between Si and thermal SiO 2 , for which significant differences in the density and energetic distribution of interface states and the concentration of insulator fixed charge between different surface orientations are well documented [203]- [206]. These differences have for example been shown to result in a five-fold increase in recombination at 111 compared to 100 surfaces passivated by thermal SiO 2 [207].…”

Section: Meditationsmentioning

confidence: 99%

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New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

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2016

Springer Theses

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High-efficiency crystalline silicon solar cells must suppress recombination at their p-type surfaces. Thin-film, amorphous aluminium oxide (Al 2 O 3) has been shown to provide very effective passivation of such surfaces, assisted by its negative fixed charge. However, many details of Al 2 O 3 passivation remain poorly understood. Furthermore, conventional means of depositing passivating Al 2 O 3 are too slow or too expensive to be suitable for high-volume commercial production. This thesis addresses these issues in three ways: 1) by contributing to a deeper understanding of semiconductor-dielectric interfaces and semiconductor surface recombination mechanisms in general, 2) by investigating the properties of Al 2 O 3 as a passivating dielectric for silicon surfaces, and 3) by demonstrating the viability of APCVD as a high-throughput, industrially compatible deposition method for Al 2 O 3 , enabling its application to commercial solar cells. Using Al 2 O 3 as a test case, it is shown how a novel analysis of the extended conductance method can be used to i) distinguish the separate contributions to the interface state distribution at a semiconductor-dielectric interface, and ii) determine their capture cross-sections for both minority and majority carriers. Furthermore, the direct link between these measured interface state properties and the recombination rate at the semiconductor surface is experimentally demonstrated by showing that the former can be used to accurately predict the latter. Investigations of the surface passivation properties of Al 2 O 3 reveal a remarkably consistent picture. It is shown that the properties of the Si-Al 2 O 3 interface states are essentially independent of the Al 2 O 3 deposition conditions and technique. The interface properties are found to be independent of the surface dopant concentration at boron-and phosphorus-doped surfaces, while recombination is shown to be only weakly dependent on surface orientation and morphology as a result of the remarkable orientation-independence of the Si-Al 2 O 3 interface state properties. Meanwhile, the chemical origin of the charge at the Si-Al 2 O 3 interface is elucidated by correlating FTIR and electrical measurements. xi xii APCVD is clearly shown-for the first time-to be capable of depositing Al 2 O 3 films with exceptional surface passivation properties, comparable to the best results achieved using other deposition techniques. In the best case, interface state densities as low as 5 × 10 10 eV −1 cm −2 at midgap, and negative fixed charge concentrations of 3.3 × 10 12 cm −2 are measured, resulting in a saturation current density of 7 fA cm −2 on undiffused p-type surfaces. The APCVD films are shown to be thermally stable under standard solar cell processing conditions and are demonstrated in large-area solar cells with peak efficiencies of 21.3 %. These results demonstrate the viability of APCVD Al 2 O 3 as a surface passivation layer for industrial silicon solar cells.

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Section: Comparison To Siomentioning

confidence: 93%

Section: Meditationsmentioning

confidence: 99%

New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

Black

2016

Springer Theses

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“…For example, correlation between interface trap densities and interface anisotropy are found 67 on the interfaces consisted of high-index surfaces. Another case 68 is that the interface of Ag/high-index substrate enhances resonance by enhancing the scattering cross-sections.…”

Section: The Search Of Relative Position Of Two Phasesmentioning

confidence: 99%

Modeling and stabilities of Mg/MgH2 interfaces: A first-principles investigation

et al. 2014

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We have theoretically investigated the modeling and the structural stabilities of various Mg/MgH2 interfaces, i.e. Mg($10\bar 10$101¯0)/MgH2(210), Mg(0001)/MgH2(101) and Mg($10\bar 10$101¯0)/MgH2(101), and provided illuminating insights into Mg/MgH2 interface. Specifically, the main factors, which impact the interfacial energies, are fully considered, including surface energies of two phases, mutual lattice constants of interface model, and relative position of two phases. The surface energies of Mg and MgH2, on the one hand, are found to be greatly impacting the interfacial energies, reflected by the lowest interfacial energy of Mg(0001)/MgH2(101) which is comprised of two lowest energy surfaces. On the other hand, it is demonstrated that the mutual lattice constants and the relative position of two phases lead to variations of interfacial energies, thus influencing the interface stabilities dramatically. Moreover, the Mg-H bonding at interface is found to be the determinant of Mg/MgH2 interface stability. Lastly, interfacial and strain effects on defect formations are also studied, both of which are highly facilitating the defect formations. Our results provide a detailed insight into Mg/MgH2 interface structures and the corresponding stabilities.

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“…High-index silicon surfaces have drawn considerable interest for their usefulness in three-dimensional metal oxide semiconductor field-effect transistors (MOSFETs) [1]. Here, formation processes of ultrathin SiO 2 at the interface are considered to be quite important in determining its dielectric properties.…”

Section: Introductionmentioning

confidence: 99%

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

Tanaka¹,

Ohno²,

Miki³

et al. 2022

Beilstein J. Nanotechnol.

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Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etching occur. A precise temperature–pressure growth mode diagram was obtained via careful measurements for Si(113), and the results were compared with those for Si(111) in the present work and Si(001) in the literature. Initial oxidation processes were identified based on high-resolution STM images.

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SiO 2 / Si interfaces on high-index surfaces: Re-evaluation of trap densities and characterization of bonding structures

Abstract: Articles you may be interested inAtomic structure analysis of SiO 2 / Si and Si 3 N 4 / Si interfaces by high-resolution transmission electron microscopy J.

Cited by 17 publications

References 18 publications

New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

Modeling and stabilities of Mg/MgH2 interfaces: A first-principles investigation

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

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