SiO
                  2
          -passivated lateral-geometry GaN transparent Schottky-barrier detectors

Adivarahan, V.; Simin, Grigory; Yang, J.; Lunev, A.; Pala, Nezih; Shur, M. S.; Gaška, R.

doi:10.1063/1.1306647

Cited by 103 publications

(51 citation statements)

References 7 publications

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“…Precise and reliable control of the depletion layer width by the Schottky contact without leakage currents is extremely important in these devices. However, GaN-based Schottky interfaces are known to suffer from unusually large leakage currents under reverse bias [1][2][3]. Excess leakage currents through a Schottky gate strongly affects, not only gate-control and power consumption, but also the noise performance in GaN-based FET devices as recently pointed out [4].…”

Section: Introductionmentioning

confidence: 99%

Mechanism of current leakage through metal/n-GaN interfaces

Oyama

Hashizume

Hasegawa

2002

Applied Surface Science

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Detailed current-voltage-temperature (I-V-T) measurements were performed on the Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the thermionic emission (TE) transport was observed in the reverse I-V curves with a large excess leakage. From the calculation based on the thermionic-field emission (TFE) model, it was found that the tunneling plays an important role in the carrier transport across the GaN Schottky barrier even for doping densities as low as 1 x 10 17 cm -3 . A novel barrier-modified TFE model based on presence of near-surface fixed charges or surface states is proposed to explain the observed large reverse leakage currents.

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Section: Introductionmentioning

confidence: 99%

Mechanism of current leakage through metal/n-GaN interfaces

Oyama

Hashizume

Hasegawa

2002

Applied Surface Science

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“…This process is advantageous to reduce leakage current. Moreover, the SiO 2 /SiN x dielectric film reflector on sidewalls of step can separate from water vapor and dust to protect the sidewalls of the step from contaminating and to improve the reliability of GaN-LED [15,16] .…”

Section: Resultsmentioning

confidence: 99%

Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes

Guang-di

et al. 2009

Sci. China Ser. F-Inf. Sci.

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In order to obtain higher light output power, the flip-chip structure is used. We studied the ratio of the light of GaN sides before and after fabricating metal reflector on p-GaN. The SiO 2 /SiNx dielectric film reflectors were deposited through plasma enhance chemical vapor deposition following the fabrication of metal reflector, and then the dielectric film reflectors on the electrodes were etched in order to expose the electrodes to the air. It is found that comparing with the flip-chip GaN-LED without dielectric film reflectors, light output power can be increased by as high as 10.2% after the deposition of 2 pairs of SiO 2 /SiNx dielectric film reflectors on GaN-LEDs, which cover the sidewalls and the areas without the metal reflector. This result indicates that the high reflector formed by multi-layer dielectric films is useful to enhance the light output power of GaN-based LED, which reflects light from step sidewalls and p-GaN without metal reflector to internal, and then light emits from the surface.GaN, light emitting diodes, SiO 2 /SiNxdielectric film reflectors, plasma enhanced chemical vapor deposition

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“…However, the low-doping efficiencies typically associated with Al x Ga 1Àx N layers having high aluminum content can limit the fabrication of heavily doped p-type and n-type layers [7,8]. Even though these difficulties exist, several groups have reported promising results for the development of UV photodetectors, including such devices as photoconductors [9,10], Schottky photovoltaic detectors [11][12][13], p-n and p-i-n photodetectors [3,14,15], metal-semiconductor-metal (MSM) photodetectors [2,16], avalanche photodiodes [17] and phototransistors [18]. Among these devices, p-i-n photodetector structures are especially attractive, because they are compact, consume less power, are rugged and reliable, and can easily be integrated with other electronic circuitry.…”

Section: Introductionmentioning

confidence: 98%