Sintering of Reaction Bonded Silicon Nitride

Mangels, J. A.

doi:10.1007/978-94-009-6851-6_19

Cited by 16 publications

(8 citation statements)

References 3 publications

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“…The theoretical density of fully nitrided materials and SRBSN was estimated to be 3.227 g/cm 3 based on the designed composition by the rule of mixture. The density values used were 3.19 g/cm 3 for Si 3 N 4 , 5.03 g/cm 3 for Y 2 O 3 , and 3.14 g/cm 3 for MgSiN 2 . Relative density was given by the ratio of the bulk density and theoretical density.…”

Section: Methodsmentioning

confidence: 99%

“…The desire for costeffective dense Si 3 N 4 components has led to the research and development of sintered reaction-bonded silicon nitride (SRBSN). [3][4][5][6][7][8][9][10][11][12][13] Compared with the direct sintering of Si 3 N 4 -powder compacts (SSN), SRBSN offers more possibility of reducing production costs of Si 3 N 4 components because of the combina-tion of the cheaper Si raw powder, the 60% weight gains from silicon nitridation, machinability of reaction-bonded silicon nitride (RBSN) body, and lower sintering shrinkage. SRBSN is typically produced by a two-step process: nitridation and postsintering.…”

Section: Introductionmentioning

confidence: 99%

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Processing and Thermal Conductivity of Sintered Reaction‐Bonded Silicon Nitride. I: Effect of Si Powder Characteristics

Zhu

Zhou

Hirao

et al. 2006

Journal of the American Ceramic Society

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This paper will present sintered reaction‐bonded silicon nitride (SRBSN) material with a high thermal conductivity of 121 W·(m·K)−1, which has been successfully prepared from a coarse Si powder with lower levels of oxygen and aluminum impurities, using a mixture of Y2O3 and MgSiN2 as sintering additives, by nitriding at 1400°C for 8 h and subsequent post‐sintering at 1900°C for 12 h at a nitrogen pressure of 1 MPa N2. This thermal conductivity value is higher than that of the materials prepared from high‐purity α‐Si3N4 powder (UBE SN‐E10) with the same additive composition under the same sintering conditions. In order to study the effects of Si powder characteristics on the processing, microstructure, and thermal conductivity of SRBSN, the other type of fine powder with higher native oxygen and metallic impurity (typically Al and Fe) contents was also used. The effects of Si particle size, native oxygen, and metallic impurities on the nitriding process, post‐sintering process, and thermal conductivity of the resultant SRBSN materials were discussed in detail. This work demonstrates that the improvement in thermal conductivity of SRBSN could be achieved by using higher purity coarse Si powder with lower levels of oxygen and aluminum impurities. In addition, this work also shows that the nitriding temperature has no significant effect on the microstructure and thermal conductivity of SRBSN during post‐sintering, although it does affect the characteristics of RBSN formed during nitridation.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Processing and Thermal Conductivity of Sintered Reaction‐Bonded Silicon Nitride. I: Effect of Si Powder Characteristics

Zhu

Zhou

Hirao

et al. 2006

Journal of the American Ceramic Society

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“…The reaction-bonded form also provides an important basis for sintered RBSN materials because of the higher green densities attainable in the reaction-bonded material compared with compacted Si 3 N 4 powder. 79 Recent studies have been made using a fluidized-bed system as the basis of a possible route to the large-scale production of lower-cost Si 3 N 4 powder. 80,81 TEM examinations of nitrided, presintered silicon powder led to the suggestion that nitrogen penetration of the silicon-silicon grain boundaries occurs; stress-induced spalling of Si 3 N 4 particles to expose fresh silicon surfaces was then postulated to occur, which agrees with the earliest suggestions for the silicon nitridation mechanism.…”

Section: (3) Nitridation Mechanismsmentioning

confidence: 99%

Silicon Nitride and Related Materials

Riley

2000

Journal of the American Ceramic Society

1,381

578

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Silicon nitride has been researched intensively, largely in response to the challenge to develop internal combustion engines with hot‐zone components made entirely from ceramics. The ceramic engine programs have had only partial success, but this research effort has succeeded in generating a degree of understanding of silicon nitride and of its processing and properties, which in many respects is more advanced than of more widely used technical ceramics. This review examines from the historical standpoint the development of silicon nitride and of its processing into a range of high‐grade ceramic materials. The development of understanding of microstructure–property relationships in the silicon nitride materials is also surveyed. Because silicon nitride has close relationships with the SiAlON group of materials, it is impossible to discuss the one without some reference to the other, and a brief mention of the development of the SiAlONs is included for completeness.

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“…While diamond -grinding might be used to form complex components, its cost would be prohibitive for most applications. Si 3 N 4 also can be cold formed and sintered (SSN) near to full density however, sintering aids must be used in large quantities which can lead to the deterioration of high temperature properties as in the case of hot-pressed Si 3 N 4 [2,3]. The most commonly used additives are magnesium oxide (MgO) and yttrium oxide (Y 2 O 3 ), which can be used separately, in combination or with aluminum oxide (Al 2 O 3 ).…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Properties of Reaction Bonded Silicon Nitride Ceramics

Hosneara¹,

Hasnat²,

Bhuyan³

2012

The Open Ceramic Science Journal

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Abstract:The effects of structural properties on the d.c. and a.c. electrical properties of different weight gain reaction bonded silicon nitride (RBSN) have been studied in this work. The degree of nitridation is assessed by the 'weight gain' of the ceramic, the percentage by which the weight is increased in the nitriding reaction. From X-ray diffraction (XRD) patterns, it is observed that a higher degree of nitriadation sample has strong -silicon nitride peaks. Intensity of -silicon nitride peaks decreases with decreasing weight gain. The higher degrees of nitridation, the samples have less significant Si peak. XRD patterns were recorded to calculate the lattice parameters of RBSN. The lattice parameters for three weight gain RBSN samples are found to be a =b = 7.7727 Å, c= 5.6565 Å (26% weight gain), a=b= 7.6272 Å, c= 5.6374 Å (42% weight gain) and a=b=7.6158 Å, c= 5.7732 Å (58.27% weight gain) and are in good agreement with the reported values from XRD patterns. Porosity (%) and surface morphology was observed by SEM.

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Sintering of Reaction Bonded Silicon Nitride

Cited by 16 publications

References 3 publications

Processing and Thermal Conductivity of Sintered Reaction‐Bonded Silicon Nitride. I: Effect of Si Powder Characteristics

Processing and Thermal Conductivity of Sintered Reaction‐Bonded Silicon Nitride. I: Effect of Si Powder Characteristics

Silicon Nitride and Related Materials

Structural and Electrical Properties of Reaction Bonded Silicon Nitride Ceramics

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