Time variation of microwave dielectric absorption has been examined for photolyzed solutions of N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD) admixed with halogen-containing compounds AX (AX = CC4, In solutions with CC14, C2H5I, C6H5I, CsHsBr, and C6HsC1, the dielectric absorption signals show first-order growths with appreciable intensities, indicating formation of a contact ion pair (CIP) TMPD+X-( X denotes a halogen atom) by reactions of these compounds with the excited triplet state of TMPD. On the contrary, no measurable amplitudes were detected for ClHsBr, C Z H~C I , C&F, and C6F6, showing that stable CIP cannot be formed with these compounds. Kinetic analyses indicate that the rate constants for the CIP formation are in the order CC4 (diffusion limit) > C6H5I > C2HsI > C&Br > C6H5Cl and that the efficiencies for the C I P formation also depend on the compound AX. These differences among the halogenated compounds cannot be explained on the basis of overall free-energy change of the reaction, but rather they correlate with the nature of dissociative electron attachment to the molecule AX.