Single-wavelength tunable erbium-doped fiber laser based on electron beam lithography inscribed varied-period plane diffraction grating

He, Wei; Zhang, Qi; Meng, Fanqi; Zhu, Lianqing

doi:10.1016/j.optlastec.2021.107064

Cited by 7 publications

(2 citation statements)

References 16 publications

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“…For example, the scheme introduced here can be applied in various situations, including but not limited to the realization of Distributed Bragg Refractor (DBR) lasers, for which the laser cavity is formed by two linear Bragg grating structures that can be fabricated in the passive device sections (Section B and Sections F), and the active gain section (Section D) is between Section B and Section F to provide the intra-cavity optical gain. Likewise, it can be used to realize a diffraction grating-based laser [20][21][22][23], for which the integrated diffraction grating is fabricated in the passive device section (e.g., Section F) to provide backside frequency selective reflection, and a linear Bragg grating structure at the "front" is fabricated in the passive device section of Section B to serve as the "laser output mirror" to output the laser beam to the surface grating structure of Section A, which then couples the output beam into an optical fiber. Other applications include integrated devices involving semiconductor optical amplifiers (SOAs), such as ultra-fast all-optical switches [24][25][26], for which the two Y-splitters (or the MMI splitter or 2 × 2 optical waveguide coupler splitter) needed for forming a Mach Zehnder interferometer can be fabricated in the passive device sections (Sections B and F).…”

Section: Discussionmentioning

confidence: 99%

Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

Chen

Wang

et al. 2021

Photonics

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In this work, a photonic device integration platform capable of integration of active-passive InP-based photonic devices without the use of material regrowth is introduced. The platform makes use of an adiabatic active-layer waveguide connection (ALWC) to move an optical beam between active and passive devices. The performance of this platform is analyzed using an example made up of four main sections: (1) a fiber coupling section for enabling vertical beam coupling from optical fiber into the photonic chip using a mode-matched surface grating with apodized duty cycles; (2) a transparent waveguide section for realizing passive photonic devices; (3) an adiabatic mode connection structure for moving the optical beam between passive and active device sections; and (4) an active device section for realizing active photonic devices. It is shown that the coupled surface grating, when added with a bottom gold reflector, can achieve a high chip-to-fiber coupling efficiency (CE) of 88.3% at 1550 nm. The adiabatic active-layer mode connection structure has an optical loss of lower than 1% (CE > 99%). The active device section can achieve an optical gain of 20 dB/mm with the use of only 3 quantum wells. The optimized structural parameters of the entire waveguide module are analyzed and discussed.

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Section: Discussionmentioning

confidence: 99%

Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

Chen

Wang

et al. 2021

Photonics

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“…As EBL can directly write any nanometer level graphics, it is widely used in surface engineering [113,114], the manufacture of microchannels [115], superconductivity [116], quantum dots [117], bionics, photonic crystal, biology [ 118,119], microelectronics, metalenses [120][121][122][123] and so on. Wang et al [124] used EBL combined with film deposition and stripping processes to produce a metalens that focused light into a focus curve of any shape with a predetermined polarization distribution.…”

Section: Eblmentioning

confidence: 99%

Progress in design, nanofabrication and performance of metalenses

WANG

et al. 2021

J. Opt.

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Metalens has been shown to overcome the diffraction limit of conventional optical lenses to achieve sub-wavelength resolution. Due to its planar structure and lightweight, metalens has the potential applications in the manufacture of flat lenses for cameras and other high resolution imaging optics. However, currently reported metalenses have low focusing efficiencies: 26% - 68% in THz and GHz range, 1% - 91% in near infrared range (NIR), and 5% - 91.6% in the visible range. Far field imaging in the visible light is essential for use in camera and mobile phones, which requires a complex metalens structure with multi-layers of alternating metal and dielectric layers. Most of the reported metalenses work in a single wavelength, mainly due to the high dispersion characteristics of the diffractive metalenses. It remains a challenge to realize high resolution imaging for a wide wavelength band in particular in the visible range. In this review, we report the state-of-the-art in metalens design principle, types of nanoscale structures, and various fabrication processes. We introduce femtosecond laser direct writing based on two-photon polymerization as an emerging nanofabrication technology. We provide an overview of the optical performance of the recently-reported metalenses and elaborate the major research and engineering challenges and future prospects.

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Laser damage threshold of Ge8As23S69 films irradiated under single- and multiple-pulse femtosecond laser

Zhou

et al. 2022

Ceramics International

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Single-wavelength tunable erbium-doped fiber laser based on electron beam lithography inscribed varied-period plane diffraction grating

Cited by 7 publications

References 16 publications

Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

Progress in design, nanofabrication and performance of metalenses

Laser damage threshold of Ge8As23S69 films irradiated under single- and multiple-pulse femtosecond laser

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