Single-wafer process technology: enabling rapid SiGe BiCMOS development

Schuegraf, K.

doi:10.1109/tsm.2003.810940

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“…Therefore, we have developed a single wafer horizontal hot-wall system to grow the highest quality epilayers on 100-mm substrates. The single wafer processing approach parallels silicon technology, which increasingly embraced single wafer processing as wafer size increased to achieve improved on-wafer uniformity, shorter cycle time, reduced thermal budget and fewer wafers in process between epitaxy and characterization [4]. Usually the per-wafer cost of epitaxy is expected to be higher for single versus multi-wafer reactors.…”

Section: Introductionmentioning

confidence: 99%

Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates

Sumakeris

Henning

O’Loughlin

et al. 2008

MSF

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We have developed a horizontal hot-wall reactor for growing extremely uniform epilayers on 100-mm diameter SiC substrates using a novel supplemental reagent source. Doping and thickness variations of 2% and 1% s / mean, respectively, have been demonstrated. The typical defect density is 2 cm-2. We describe the growth cell in detail and discuss the development of the design and process to produce these very uniform epilayers.

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Section: Introductionmentioning

confidence: 99%