Single-Step Formation of ZnO/ZnWO<sub><i>x</i></sub> Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States

Lin, Shih-Ming; Huang, Juntong; Chang, Wei-Yao; Hou, Te-Chien; Huang, Hsin Yu; Huang, Chi-Hsin; Lin, Su‐Jien; Chueh, Yu‐Lun

doi:10.1021/am4016928

Cited by 21 publications

(22 citation statements)

References 37 publications

(57 reference statements)

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“…By employing proper electrical programming to control formation and rupture of CF at the particular switching layer, complementary switching (CS) characteristics can be achieved. CS is a unique switching characteristic that is useful for avoiding sneak path disadvantage in a three-dimensional crossbar RRAM application [ 153 , 154 ].…”

Section: Reviewmentioning

confidence: 99%

“…Inset shows the device configuration and the corresponding resistive switching for two cells. All the thickness of ZnWOx layer is ∼15 nm [ 154 ] …”

Section: Reviewmentioning

confidence: 99%

“…Another method to produce CS characteristic is by simply reversely stacking two cell memories. Figure 9b , c shows the resistive switching characteristics of Pt/ZnO/ZnWOx/W (cell A) and W/ZnWOx/ZnO/Pt (cell B) memory, respectively [ 154 ]. These devices can only be set (LRS) and reset (HRS) by applying negative and positive bias at the Pt electrode, respectively.…”

Section: Reviewmentioning

confidence: 99%

“…These devices can only be set (LRS) and reset (HRS) by applying negative and positive bias at the Pt electrode, respectively. Figure 9 d shows the CS characteristics of Pt/ZnO/ZnWOx/W/ZnWOx/ZnO/Pt device [ 154 ]. The CS characteristic on this device can be generated under programming steps as followed [ 154 ]; initially, both cells are in HRS, called as “OFF” state.…”

Section: Reviewmentioning

confidence: 99%

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Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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Section: Reviewmentioning

confidence: 99%

“…Inset shows the device configuration and the corresponding resistive switching for two cells. All the thickness of ZnWOx layer is ∼15 nm [ 154 ] …”

Section: Reviewmentioning

confidence: 99%

Section: Reviewmentioning

confidence: 99%

Section: Reviewmentioning

confidence: 99%

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Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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“…Recently, complementary resistive switch was attracted renewed interest for coding the logic bit in two different reset (high resistance) states to resolve the sneak-path issue, without using any select devices. 14,15 Recent report 19 suggest that complementary resistive switching can be achieved by fabricating back-toback RRAM cells configuration, however, the approach requires complicated process flow and time consuming.…”

Section: Introductionmentioning

confidence: 99%

Temperature induced complementary switching in titanium oxide resistive random access memory

2016

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On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

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Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO₂/Al₂O₃/TiO_x (HAT) RRAM

Banerjee

Zhang

Luo

et al. 2018

Adv Elect Materials

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most importantly cost effectiveness. To some extent RRAM with 3D vertical (3D-VRRAM) design is gearing-up to serve the need of high-density storage and neuromorphic applications. [4][5][6][7] However, sneak leakage paths are one of the major hindrances toward the successful implementation of such 3D-VRRAM array. [8][9][10] Nonlinear current is an effective solution to this problem, which can be added explicitly (adding external device) or implicitly (design built-in nonlinearity) to the 3D-VRRAM devices. [11] In another approach, complementary resistive switching (CRS) can reduce the sneak leakage paths through a large array. The conceptual design, as proposed by Linn et al., [12] is based on three metal lines, i.e., back-to-back connection of two adjacent RRAM cells. [13][14][15][16][17][18] Therefore, if two cells maintain low resistance state (LRS) then the total resistance of the devices is in LRS, but if one of them is in high resistance state (HRS) then the total resistance is HRS. Based on the LRS/HRS configuration the device changes its states either 1 or 0. Both of the electrochemical metallization type [19,20] and valance change memory type [21,22] CRS devices have been reported with different designs by the single layer, [23][24][25][26][27][28] bilayer, [29][30][31][32][33] trilayer, [34][35][36] and also for the carbon-based [37] structures. The conventional CRS with additional metal lines increases the fabrication cost, moreover, it is difficult to accommodate such complicated design in the 3D-VRRAM array. Therefore, the need of time demands an effective design utilizing the 3D approach of the RRAM devices at the same time enhancing the high-speed electrical performances.In our last work, [4] we have reported the design of 3D-VRRAM based on Al 2 O 3 /TiO x (AT) resistive switching (RS) stack. The device was capable to show nonlinear RS switching, in addition CRS was achieved only after the transition failure from LRS to HRS, which automatically restricted the yield of the CRS operation in AT structure. Here we show the design of an additional middle electrode-less 3D-VRRAM CRS device based on the novel HfO 2 /Al 2 O 3 /TiO x (HAT) structure. The natural origin of CRS automatically enhance the yield of the HAT trilayer structure as compare to the AT bilayer. The CRS mechanism is mainly based on the oxygen vacancy (V o ) Complementary resistive switching (CRS) is a suitable approach to minimize the sneak leakage paths through a large resistive random access memory (RRAM) array. Here, an effective CRS design with a HfO 2 /Al 2 O 3 / TiO x (HAT) trilayer structure integrated in a 3D vertically stacked RRAM array is reported. The design shows voltage-controlled resistive switching and CRS performance with multilevel operations. High-speed switching is observed with the HAT design. The device shows SET and the RESET transitions with speeds of −3.5 V@30 ns and +3.8 V@150 ns, respectively. As well as with the DC measurements, the CRS switching is achieved under AC switching dynamics measurement. Maintaining...

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Single-Step Formation of ZnO/ZnWO_x Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States

Cited by 21 publications

References 37 publications

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Temperature induced complementary switching in titanium oxide resistive random access memory

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO₂/Al₂O₃/TiO_x (HAT) RRAM

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Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States

Cited by 21 publications

References 37 publications

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Temperature induced complementary switching in titanium oxide resistive random access memory

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM

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Single-Step Formation of ZnO/ZnWO_x Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO₂/Al₂O₃/TiO_x (HAT) RRAM