Single-step etched grating couplers for silicon nitride loaded lithium niobate on insulator platform

Han, Xu; Jiang, Yongheng; Frigg, Andreas; Xiao, Huifu; Zhang, Pu; Boes, Andreas; Nguyen, Thach G.; Yang, Jianhong; Ren, Guanghui; Su, Yikai; Mitchell, Arnan; Tian, Yonghui

doi:10.1063/5.0055213

Cited by 37 publications

(17 citation statements)

References 45 publications

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“…The devices are interfaced by grating couplers with a grating period of 920 nm and a duty circle of 0.4. [ 40 ]…”

Section: Resultsmentioning

confidence: 99%

“…The devices are interfaced by grating couplers with a grating period of 940 nm and duty circle of 0.4. [ 40 ] The normalized results are shown in Figure 5b. The measured insertion loss for TM 0 mode is about 1.3 dB, and the PER is about 30.6 dB, at a wavelength of 1550 nm.…”

Section: Resultsmentioning

confidence: 99%

“…The devices are interfaced by grating couplers with a grating period of 920 nm and a duty circle of 0.4. [40] Figure 4c shows the measured results of the TE 1 -mode-pass filter. At a wavelength of 1550 nm, the device shows insertion loss for TE 1 mode of 1.9 dB and a MER of about 43 dB.…”

Section: Swg-based Spatial Mode Filtersmentioning

confidence: 99%

See 2 more Smart Citations

Integrated Subwavelength Gratings on a Lithium Niobate on Insulator Platform for Mode and Polarization Manipulation

Han

Chen

Jiang

et al. 2022

Laser & Photonics Reviews

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Lithium niobate on insulator (LNOI) has emerged as a promising platform for photonic integrated circuits, with a fast‐growing toolbox of components. This paper proposes, designs, and experimentally demonstrates compact subwavelength grating (SWG) waveguides on an LNOI platform for on‐chip mode and polarization manipulation. To overcome the limitation of waveguide fabrication, the SWGs are designed and formed on a silicon nitride thin film deposited onto the surface of LNOI chip. As proof‐of‐concept devices, the SWG‐based spatial mode filters (including a TE1‐mode‐pass filter and a TE2‐mode‐pass filter) and a TM‐pass polarizer are fabricated successfully on the same chip, with the device lengths of only ≈50 μm. The measured insertion losses for the devices are lower than 3.1 dB, with high extinction ratio larger than 30 dB, at a wavelength of 1550 nm. The proposed and demonstrated SWGs can serve as important building blocks in a series of mode and polarization handling devices for LNOI integrated photonics.

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“…The devices are interfaced by grating couplers with a grating period of 920 nm and a duty circle of 0.4. [ 40 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Integrated Subwavelength Gratings on a Lithium Niobate on Insulator Platform for Mode and Polarization Manipulation

Han

Chen

Jiang

et al. 2022

Laser & Photonics Reviews

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“…Currently, various active and passive devices have been proposed and demonstrated on the Si 3 N 4 -LNOI hybrid platform. [19][20][21][22][23][24][25][26][27][28][29][30] DOI: 10.1002/adpr.202200121 Lithium niobate on insulator (LNOI) has been demonstrated as a promising platform for photonic integrated circuits (PICs), thanks to its excellent properties such as strong electro-optic effect, low material loss, and wide transparency window. Herein, a monolithic PIC for high-speed data communication application on a lithium-niobate-etchless platform with silicon nitride (Si 3 N 4 ) as a loading material is proposed and demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Monolithic Photonic Integrated Circuit Based on Silicon Nitride and Lithium Niobate on Insulator Hybrid Platform

Jiang

Han

Huang

et al. 2022

Advanced Photonics Research

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Lithium niobate on insulator (LNOI) has been demonstrated as a promising platform for photonic integrated circuits (PICs), thanks to its excellent properties such as strong electro-optic effect, low material loss and wide transparency window. In this paper, we propose and demonstrate a monolithic PIC for high-speed data communication application on a lithium-niobate-etchless platform with silicon nitride (Si3N4) as a loading material. The fabricated PIC consists of four racetrack resonator modulators and a pair of four-channel mode (de)multiplexers, which shows high data modulation rate of 70 Gbps for single channel and the total data throughput reaches up to 280 Gbps. To the best of our knowledge, this is the rst demonstration of PIC consisting of high-speed electro-optical modulators and (de)multiplexers with such high data capacity on Si3N4-LNOI hybrid platform, which opens up new avenues for achieving large-scale monolithic integration on LNOI platform in future.

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“…Thus, the electrode absorption loss is almost negligible. Since it is difficult to achieve high-quality etching of TFLN, etchless TFLN platform has been considered, in which the optical waveguides were formed by patterning other materials (e.g., Si [30], Si 3 N 4 [31], polymer [32]) atop the etchless TFLN wafer. Based upon such a scheme, etchless TFLN-based AOM has been realized with modulation frequency beyond 4 GHz and Q factor higher than 500,000 [32].…”

Section: Introductionmentioning

confidence: 99%

Thin-Film Lithium Niobate Based Acousto-Optic Modulation Working at Higher-Order TE1 Mode

Yang

Huang

et al. 2021

Photonics

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Acousto-optic modulation (AOM) is regarded as an effective way to link multi-physical fields on-chip. We propose an on-chip AOM scheme based on the thin-film lithium niobate (TFLN) platform working at the higher-order TE1 mode, rather than the commonly used fundamental TE0 mode. Multi-physical field coupling analyses were carried out to obtain the refractive index change of the optical waveguide (>6.5×10−10 for a single phonon) induced by the enhanced acousto-optic interaction between the acoustic resonator mode and the multimode optical waveguide. By using a Mach-Zehnder interferometer (MZI) structure, the refractive index change is utilized to modulate the output spectrum of the MZI, thus achieving the AOM function. In the proposed AOM scheme, efficient mode conversion between the TE0 and TE1 mode is required in order to ensure that the AOM works at the higher-order TE1 mode in the MZI structure. Our results show that the half-wave-voltage-length product (VπL) is <0.01 V·cm, which is lower than that in some previous reports on AOM and electro-optic modulation (EOM) working at the fundamental TE0 mode (e.g., VπL > 0.04 V·cm for AOM, VπL > 1 V·cm for EOM). Finally, the proposed AOM has lower loss when compared with EOM because the electrode of the AOM can be placed far from the optical waveguide.

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Single-step etched grating couplers for silicon nitride loaded lithium niobate on insulator platform

Cited by 37 publications

References 45 publications

Integrated Subwavelength Gratings on a Lithium Niobate on Insulator Platform for Mode and Polarization Manipulation

Integrated Subwavelength Gratings on a Lithium Niobate on Insulator Platform for Mode and Polarization Manipulation

Monolithic Photonic Integrated Circuit Based on Silicon Nitride and Lithium Niobate on Insulator Hybrid Platform

Thin-Film Lithium Niobate Based Acousto-Optic Modulation Working at Higher-Order TE1 Mode

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