Single step, complementary doping of graphene

Brenner, Kevin; Murali, Raghunath

doi:10.1063/1.3308482

Cited by 85 publications

(78 citation statements)

References 16 publications

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“…in the same manner as for prior work on 2D-2D tunneling). 2,3 Doping of graphene can be accomplished by a variety of means, 16,17,18,19 and chemical potentials shifted by 0.1 eV or more from the Dirac point, both n-type and p-type, are not uncommon. In this respect the simulations presented here appear to be applicable to physically realizable situations.…”

Section: Discussionmentioning

confidence: 99%

Single-particle tunneling in doped graphene-insulator-graphene junctions

Feenstra

Jena

Gu³

2012

Journal of Applied Physics

156

260

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The characteristics of tunnel junctions formed between n-and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the twodimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak are computed, and its use for devices is discussed. The influences of both rotational alignment of the graphene electrodes and structural perfection of the graphene are also discussed.

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Section: Discussionmentioning

confidence: 99%

Single-particle tunneling in doped graphene-insulator-graphene junctions

Feenstra

Jena

Gu³

2012

Journal of Applied Physics

156

260

View full text Add to dashboard Cite

show abstract

“…There are several approaches to achieve controlled doping of graphene which have already been investigated: One is chemical doping by using adsorbates which is realised by deposition of molecules or coating on top of graphene sheets [9]. Another approach is using the substrate to induce charge transfer at the interface.…”

Section: Cimap (Cea-cnrs-ensicaen-ucbn) 14070 Caen Cedex 5 Francementioning

confidence: 99%

Manipulation of the graphene surface potential by ion irradiation

et al. 2013

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We show that the work function of exfoliated single layer graphene can be modified by irradiation with swift (E kin = 92 MeV) heavy ions under glancing angles of incidence. Upon ion impact individual surface tracks are created in graphene on SiC. Due to the very localized energy deposition characteristic for ions in this energy range, the surface area which is structurally altered is limited to ≈ 0.01 µm 2 per track. Kelvin probe force microscopy reveals that those surface tracks consist of electronically modified material and that a few tracks suffice to shift the surface potential of the whole single layer flake by ≈ 400 meV. Thus, the irradiation turns the initially n-doped graphene into p-doped graphene with a hole density of 8.5 × 10 12 holes/cm 2 . This doping effect persists even after heating the irradiated samples to 500 • C. Therefore, this charge transfer is not due to adsorbates but must instead be attributed to implanted atoms. The method presented here opens up a new way to efficiently manipulate the charge carrier concentration of graphene.

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“…8 A number of doping approaches have been proposed for graphene. Chemical methods are used to produce large-area doping with other elements, e.g., oxygen, nitrogen or hydrogen.…”

mentioning

confidence: 99%

Local electrical stress-induced doping and formation of monolayer graphene P-N junction

Liang

Kim

et al. 2011

Applied Physics Letters

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We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO 2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on 2D graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing.

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Single step, complementary doping of graphene

Cited by 85 publications

References 16 publications

Single-particle tunneling in doped graphene-insulator-graphene junctions

Single-particle tunneling in doped graphene-insulator-graphene junctions

Manipulation of the graphene surface potential by ion irradiation

Local electrical stress-induced doping and formation of monolayer graphene P-N junction

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