Single-Shot Spin Readout in Graphene Quantum Dots

Gachter, Lisa; Garreis, Rebekka; Daniel, Gerber, Jonas; Ruckriegel, Max J.; Tong, Chuyao; Kratochwil, Benedikt; Vries, Folkert K. de; Kurzmann, Annika; Watanabe, Kenji; Taniguchi, Takashi; Ihn, Thomas; Ensslin, Klaus; Huang, W.

doi:10.1103/prxquantum.3.020343

Cited by 23 publications

(18 citation statements)

References 30 publications

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“…Furthermore, the dynamics of excited states are also studied using pulsed‐gate spectroscopy. [ 192–194 ] A spin relaxation time exceeding 200

\umu {\rm s}

has been extracted. [ 193 ]…”

Section: Gate‐defined Graphene Quantum Dotsmentioning

confidence: 99%

“…This results in a transport current below 1 pA, which is very difficult to be precisely measured. [ 192–194 ] Meanwhile, particular electron state manipulations require that the electron tunneling can only happen through single‐side barrier. [ 222 ] In these cases, no transport current can be detected.…”

Section: Challenges and Opportunitiesmentioning

confidence: 99%

“…Thus, when a tunneling event happens in the dot, it will be reflected by a current jump/peak of the detector, even when direct transport current through the dot is no longer measurable (Figure 13b). Such a charging detecting scheme has been demonstrated in both etched [ 128,138,143,145,224 ] and gate‐defined [ 194,225 ] graphene quantum dots. Another possible solution to the readout problem is using the radio‐frequency reflectometry technique.…”

Section: Challenges and Opportunitiesmentioning

confidence: 99%

“…[ 34,42,233,234 ] Thus, the devices’ response to microwaves and pulse sequences needs to be investigated to reveal the coherency of the system. Although charge pumping [ 131 ] and relaxation time measurements [ 132,192–194 ] have been realized, other typical microwave manipulation experiments, which are widely studied in quantum dots based on other material systems, such as photon‐assisted tunneling, [ 235–238 ] and controlled rotations on the Bloch sphere, [ 239–248 ] are still in lack of demonstration in 2D material systems.…”

Section: Challenges and Opportunitiesmentioning

confidence: 99%

“…Moreover, due to the weak spin–orbit coupling and hyperfine interaction, graphene is expected to be a promising material for hosting spin qubits. [ 111 ] The long spin relaxation time in graphene quantum dots reported recently [ 192–194 ] provides great potential along this approach.…”

Section: Challenges and Opportunitiesmentioning

confidence: 99%

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Gate‐Controlled Quantum Dots Based on 2D Materials

et al. 2022

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Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valleycontrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

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“…Furthermore, the dynamics of excited states are also studied using pulsed‐gate spectroscopy. [ 192–194 ] A spin relaxation time exceeding 200

\umu {\rm s}

has been extracted. [ 193 ]…”

Section: Gate‐defined Graphene Quantum Dotsmentioning

confidence: 99%

Section: Challenges and Opportunitiesmentioning

confidence: 99%

Section: Challenges and Opportunitiesmentioning

confidence: 99%

Section: Challenges and Opportunitiesmentioning

confidence: 99%

Section: Challenges and Opportunitiesmentioning

confidence: 99%

See 3 more Smart Citations

Gate‐Controlled Quantum Dots Based on 2D Materials

et al. 2022

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Elektronen auf den Punkt gebracht

Volk¹,

Banszerus²,

Stampfer

2023

Physik in unserer Zeit

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ZusammenfassungNachdem erstmals ein Einzelelektronen‐Quantenpunkt in zweilagigem Graphen gezeigt wurde, folgten in kurzer Zeit wegweisende Experimente. Dazu zählen die Untersuchung des Ein‐ und Zweiteilchenspektrums, der Elektronen‐Loch‐Übergang, die kontrollierbare Kopplung von Quantenpunkten, Ladungsdetektion, Pauli‐Blockade und die hier gezeigten Messungen der Spin‐Relaxationszeit. Diese Experimente tragen wesentlich zum Verständnis der elektronischen Zustände in Graphen‐Quantenpunkten bei. Sie sind wichtige Meilensteine auf dem Weg zur Realisierung eines graphenbasierten Qubits. Die gemessenen Spin‐Relaxationszeiten sind bereits hinreichend lang und Mechanismen zur Spin‐Detektion sind vorhanden. Damit lassen sich Spin‐Qubits angehen.

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Tuning Confined States and Valley G‐Factors by Quantum Dot Design in Bilayer Graphene

Mayer,

Knothe

2023

Physica Status Solidi (b)

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Electrostatically confined quantum dots in bilayer graphene have shown potential as building blocks for quantum technologies. To operate the dots, e.g., as qubits, a precise understanding and control of the confined states and their properties is required. Here, we perform large‐scale numerical characterization of confined quantum states in bilayer graphene dots over an extensive range of gate‐tunable parameters such as the dot size, depth, shape, and the bilayer graphene gap. We establish the dot states’ orbital degeneracy, wave function distribution, and valley g‐factor and provide the parametric dependencies to achieve different regimes. We find that the dot states are highly susceptible to gate‐dependent confinement and material parameters, enabling efficient tuning of confined states and valley g‐factor modulation by quantum dot design.This article is protected by copyright. All rights reserved.

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Single-Shot Spin Readout in Graphene Quantum Dots

Cited by 23 publications

References 30 publications

Gate‐Controlled Quantum Dots Based on 2D Materials

Gate‐Controlled Quantum Dots Based on 2D Materials

Elektronen auf den Punkt gebracht

Tuning Confined States and Valley G‐Factors by Quantum Dot Design in Bilayer Graphene

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