2002
DOI: 10.1002/1521-3951(200210)233:3<416::aid-pssb416>3.0.co;2-r
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Single-Qubit Operations with the Nitrogen-Vacancy Center in Diamond

Abstract: A concept combining optics and microwave pulses with the negative charge-state of the nitrogenvacancy (NV --) center in diamond is demonstrated through experiments that are equivalent to single-qubit gates, and decoherence for this qubit is examined. The spin levels of the ground state provide the two-level system. Optical excitation provides polarization of these states. The polarized state is operated coherently by 35 GHz microwave pulses. The final state is read out through the photoluminescence intensity. … Show more

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Cited by 39 publications
(33 citation statements)
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“…Such a unitary operator can be implemented experimentally for nitrogen-vacancy centers [54]. To sum up, in this case, we first allow the nitrogenvacancy center to interact with the magnetic field, apply the operator U R to the nitrogen-vacancy center state, and then perform the measurement in the {|0 ,|1 } basis.…”
Section: Imperfect Photon Detection Efficiencymentioning
confidence: 99%
“…Such a unitary operator can be implemented experimentally for nitrogen-vacancy centers [54]. To sum up, in this case, we first allow the nitrogenvacancy center to interact with the magnetic field, apply the operator U R to the nitrogen-vacancy center state, and then perform the measurement in the {|0 ,|1 } basis.…”
Section: Imperfect Photon Detection Efficiencymentioning
confidence: 99%
“…However, if polarisation occurred by a two-photon process, such as that suggested in Ref. [12], the strength of the EPR signal would be expected to increase quadratically with optical pumping power. We measured the strength of the EPR signal for laser powers in the 100-850 mW range (measured at the laser output).…”
Section: Electron Paramagnetic Resonance Measurementsmentioning
confidence: 99%
“…
In recent years, a variety of solid-state qubits has been realized, including quantum dots [1,2], superconducting tunnel junctions [3,4] and point defects [5,6]. Due to its potential compatibility with existing microelectronics, the proposal by Kane [7,8] based on phosphorus donors in Si has also been pursued intensively [9,10,11].
…”
mentioning
confidence: 99%