Single-pulse Laser Induced Buried Defects in Silicon Written by Ultrashort-pulse Laser at 2.1 um

Abstract

We report sub-wavelength micrometer-sized buried defects induced in silicon by single ultrashort laser pulses at 2.09 µm. We also report laser-induced depressed cladding waveguide and other 3D-structures, and demonstrate waveguiding.

Structured aqueous processed lignin-based NMC cathodes for energy-dense LIBs with improved rate capability

“…Ultrashort-pulsed mid-infrared laser from ATLA Lasers AS operating around 2.1 mm was used as a structuring tool. 68,69 Laser emission was focused on the cathode surface by 11 mm focal distance aspheric lens antireection coated at the laser operation wavelength. The movements of the cathode against the laser beam were carried out by the three-axis air-bearing translation stage, ensuring excellent positioning speed, precision, and repeatability.…”