Single-Pole Eight-Throw RF MEMS Rotary Switch

Pranonsatit, S.; Holmes, Andrew S.; Robertson, I.D.; Lucyszyn, S.

doi:10.1109/jmems.2006.883578

Cited by 22 publications

(14 citation statements)

References 19 publications

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“…This symmetric circular topology allows the design of multiple-throw switches with any number of ports by determining θ max , r 1 , r 2 , and r 3 . Pranonsatit [23] has reported a circular switch based on a large rotor disc which is anchored to a central bearing. However, this design has a mechanical instability problem due to its free tilted and unfixed rotor.…”

Section: A Symmetric Circular Switchmentioning

confidence: 99%

“…On the other hand, RF MEMS metal-contact switches have lower insertion loss and higher isolation and linearity in comparison to SOI/SOS switches. Furthermore, RF MEMS switches can be operated up to 10 GHz with a large number of ports, and are therefore useful for satellite switching network and other applications such as wideband (defense) radios [6]- [23]. Thus, it is important to develop an RF MEMS switch capable of switching a large number of ports in a small chip area, since area is directly proportional to cost in large-volume manufacturing processes.…”

Section: Introductionmentioning

confidence: 99%

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Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches

Yang

Yahiaoui

Zareie

et al. 2015

J. Microelectromech. Syst.

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This paper presents extremely compact single-pole multiple-throw radio frequency (RF) microelectromechanical system switches, SP7T and SP11T, based on a symmetric circular switch topology. The switch dimensions are 0.61 mm × 0.61 mm, which is smaller than typical CMOS Si-on-insulator switches. The SP7T and SP11T switches, which are insensitive to stress gradient effects, achieve simulated contact and restoring forces of 0.3-0.4 mN (per a switch) at 90-100 V. The SP7T and SP11T switches also achieve isolation levels of 50-19 dB and 50-17 dB, respectively, and insertion loss of 0.3-1.2 dB and 0.3-1.7 dB, respectively, at 0.1-10 GHz. The measured ON-resistance is 4.5-2.5 at 75-100 V, respectively, in an open environment and limited by contact contamination. The measured switching time is 7-10 μs. Cold-switched reliability tests of SP7T and SP11T switches show greater than 10 8 Hz with an RF power of 0.1-1 W, which is sufficient power handling capability for 3G and 4G systems.[ 2014-0001]Index Terms-Radio frequency microelectromechanical systems (RF MEMS), contact switch, switching networks, metal-contact, electrostatic relay. Fig. 1. (a) Conceptual and (b) cross-sectional view of a symmetric circular switch with a shared center post and shared anchors. 1057-7157

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Section: A Symmetric Circular Switchmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches

Yang

Yahiaoui

Zareie

et al. 2015

J. Microelectromech. Syst.

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“…[21][22][23][24] Electrostatic, [25][26][27] electromagnetic, 28,29 and thermoelastic 30 actuation have been primarily used in rf MEMS switches. Electromagnetic and thermoelastic actuation methods require high power consumption for actuation ͑few milliwatts per device͒ and are incompatible with modern low power rf front ends.…”

Section: Mems Aln Switch Technologymentioning

confidence: 99%

Integrated aluminum nitride piezoelectric microelectromechanical system for radio front ends

Piazza¹

2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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This article summarizes the most recent technological developments in the realization of integrated aluminum nitride (AlN) piezoelectric microelectromechanical system (MEMS) for radio frequency (rf) front ends to be employed in next generation wireless communication devices. The AlN-based resonator and switch technologies are presented, their principle of operation explained, and some key experimental achievements showing device operations between 20MHz and 10GHz are introduced. Fundamental material, device, and fabrication aspects that needed to be taken into account for the demonstration of the first integrated rf MEMS solution based on the combination of AlN MEMS resonators and switches are highlighted. Given the ability to operate over a broad range of frequencies on a single silicon chip, the AlN MEMS technology is extremely attractive for the demonstration of reconfigurable and multiband rf transceivers. Next generation rf architectures that take advantage of large scale integration of AlN MEMS resonators and switches are briefly presented.

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“…In a new approach, electric power is obtained by the electret turbine. It is well‐known that the electrostatic motor produces higher output power compared with the electromagnetic motor in the microsystem . If we implant much charge into an electret, we can get larger electric power.…”

Section: Introductionmentioning

confidence: 99%

A new approach for body heat energy harvesting

Tomono

2019

Int J Energy Res

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Summary A new approach for body heat energy harvesting was proposed, and the theoretical performance has been demonstrated for wearable health care sensors as a target. One of the most important issues in the wearable system is a power supply. Humans keep their body temperature constant as long as they are alive. If we use thermal energy effectively, we could get the energy no matter when and where we go. However, thermal energy has hardly been used as power supply because thermoelectric conversion efficiency is very low. Quite different from the conventional thermoelectric device, the new approach uses rotation of turbine by stack effect. The driving force for the turbine is the pressure difference (ΔP) created by stack effect in a closed system. To obtain high performance, the device parameters are optimized by theoretical analysis. The obtained power density is 97.2 mW/cm3 when the outside air temperature is 277.15 K, and the device size is 5 mm × 2 mm × 10 mm. The energy density of the device is five or more times larger than that of a solar cell. The energy device can be assembled directly inside the various kind of wearable health care sensors. Therefore, the new approach for the body heat energy harvesting is a promising power supply means for the wearable system.

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Single-Pole Eight-Throw RF MEMS Rotary Switch

Cited by 22 publications

References 19 publications

Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches

Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches

Integrated aluminum nitride piezoelectric microelectromechanical system for radio front ends

A new approach for body heat energy harvesting

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