Single-Photon-Emitting Optical Centers in Diamond Fabricated upon Sn Implantation

Tchernij, S. Ditalia; Herzig, Tobias; Forneris, J.; Küpper, Johannes; Pezzagna, Sébastien; Traina, P.; Moreva, E. V.; Degiovanni, I. P.; Brida, G.; Skukan, Natko; Genovese, M.; Jakšić, Milko; Meijer, Jan; Olivero, P.

doi:10.1021/acsphotonics.7b00904

Cited by 99 publications

(100 citation statements)

References 43 publications

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“…The value of g (2) (0)=0.05 can be fully explained by the dark counts of the avalanche photo diodes (APD; SPCM-AQRH-14, Excelitas) being used in the experiment and thereby proving perfect single photon emission. The saturation count rates (intensities) of the single emitters investigated in sample NI58 vary between 80 and 150 kcts s −1 (200-m 600 W) when employing an NA=0.9 objective, similar to what was found in [16,17]. The count rates are one to two orders of magnitude larger than for -SiV centres in unstructured electronic grade bulk diamond [5,6].…”

Section: Single Photon Emission and Fluorescence Lifetimesupporting

confidence: 66%

Spectroscopic investigations of negatively charged tin-vacancy centres in diamond

et al. 2020

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The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using photoluminescence excitation spectroscopy we probe an energetically higher lying excited state and prove fully lifetime limited linewidths of single emitters at cryogenic temperatures. For these emitters we also investigate the stability of the charge state under resonant excitation. These results provide a detailed insight into the spectroscopic properties of the SnV − centre and lay the foundation for further studies regarding its suitability in QIP.

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Section: Single Photon Emission and Fluorescence Lifetimesupporting

confidence: 66%

Spectroscopic investigations of negatively charged tin-vacancy centres in diamond

et al. 2020

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“…In conventional low‐fluence implantation, the number of implanted ions is described by Poissonian statistics . This approach has been used to produce single‐photon emitters in diamond (Figure d) with irradiation fluences in the 10 8 –10 14 cm −2 range, depending on the ion species and energy, thermal annealing parameters, and substrate dopants concentration …”

Section: Deterministic Placement Of Color Centersmentioning

confidence: 99%

“…The SiV center can be regarded as the most promising optically‐active defect in diamond for quantum information and quantum communication applications, due to an interesting degree of photon indistinguishability and to the availability of schemes for the coherent control of its spin properties . In recent years, additional emitters related to group‐IV impurities have been explored, such as the germanium‐related (GeV, ZPL at 602 nm), tin‐related (SnV, ZPL at 620 nm) and lead‐related (PbV, ZPL at 520 nm) color centers . These defects are characterized by similar defect structure and opto‐physical properties to those of the SiV center.…”

Section: Deterministic Placement Of Color Centersmentioning

confidence: 99%

Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation

et al. 2019

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Diamond has attracted great interest as a quantum technology platform thanks to its optically active nitrogen vacancy (NV) center. The NV's ground state spin can be read out optically, exhibiting long spin coherence times of ≈1 ms even at ambient temperatures. In addition, the energy levels of the NV are sensitive to external fields. These properties make NVs attractive as a scalable platform for efficient nanoscale resolution sensing based on electron spins and for quantum information systems. Diamond photonics enhance optical interactions with NVs, beneficial for both quantum sensing and information. Diamond is also compelling for microfluidic applications due to its outstanding biocompatibility, with sensing functionality provided by NVs. However, it remains a significant challenge to fabricate photonics, NVs, and microfluidics in diamond. In this Progress Report, an overview is provided of ion irradiation and femtosecond laser writing, two promising fabrication methods for diamond‐based quantum technological devices. The unique capabilities of both techniques are described, and the most important fabrication results of color center, optical waveguide, and microfluidics in diamond are reported, with an emphasis on integrated devices aiming toward high performance quantum sensors and quantum information systems of tomorrow.

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“…In Note: During the preparation of this manuscript, we became aware of another study showing room temperature characteristics of Sn-related color centers in diamond [36]. Figure S1a,b show PL spectra from Sn ion implanted diamonds followed by annealing at different temperatures under high pressure and vacuum.…”

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confidence: 99%

Tin-Vacancy Quantum Emitters in Diamond

et al. 2017

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Tin-vacancy (SnV) color centers were created in diamond by ion implantation and subsequent high temperature annealing up to 2100 °C at 7.7 GPa. The first-principles calculation suggests that the large atom of tin can be incorporated into the diamond lattice with a split-vacancy configuration, in which a tin atom sits on an interstitial site with two neighboring vacancies. The SnV center shows a sharp zero phonon line at 619 nm at room temperature. This line splits into four peaks at cryogenic temperatures with a larger ground state splitting of ~850 GHz than those of color centers based on other IV group elements, silicon-vacancy (SiV) and germanium vacancy (GeV) centers. The excited state lifetime was estimated to be ~5 ns by Hanbury Brown-Twiss interferometry measurements on single SnV quantum emitters. The order of the experimentally obtained optical transition energies comparing with the SiV and GeV centers is good agreement with the theoretical calculations.Point defect-related color centers in solid state materials are a promising approach for quantum information processing [1,2]. Nitrogen-vacancy (NV) centers in diamond have been most intensively studied from the viewpoint of both fundamental and applied sciences [3,4]. However, the zero phonon line (ZPL) of the NV center possesses a fraction of only 4 % in its total fluorescence due to its large phonon sideband (PSB). Also, the NV center suffers from external noise, leading to instability of the optical transition energy. To overcome these drawbacks, color centers based on IV group elements, silicon-vacancy (SiV) [5][6][7] and germanium-vacancy (GeV) [8][9][10][11] centers, has attracted attention owing to their large ZPL, structural symmetry robust against the external noise, and availability of quantum emission by single centers. Recently, spin control and evaluation of spin coherence time have been investigated for this two color centers [12][13][14][15][16], revealing that their spin coherence times were limited to sub-microseconds even at cryogenic temperatures < 5 K, much shorter than that of the NV center [17,18]. This limitation originates from phonon-mediated transitions between the lower and upper branches in the ground state [13][14][15][16]. Further cooling down to the sub-Kelvin regime or strain engineering is considered as a solution [15,16]. Another possibility is creation of a novel color center possessing a larger energy splitting in the ground state.For this purpose, in this study, we investigated the utilization of a IV group atom of tin (Sn, Fig. 1a).The incorporation of such a heavy atom into the diamond lattice as a form of a color center, especially single quantum emitter, has not been demonstrated yet. Here, we fabricated tin-vacancy (SnV) centers in diamond in both ensemble and single states by combination of ion implantation and subsequent high temperature annealing up to 2100 °C under a high pressure of 7.7 GPa. Low temperature optical measurements revealed that the ground state splitting of the SnV center was much larg...

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Single-Photon-Emitting Optical Centers in Diamond Fabricated upon Sn Implantation

Cited by 99 publications

References 43 publications

Spectroscopic investigations of negatively charged tin-vacancy centres in diamond

Spectroscopic investigations of negatively charged tin-vacancy centres in diamond

Quantum Micro–Nano Devices Fabricated in Diamond by Femtosecond Laser and Ion Irradiation

Tin-Vacancy Quantum Emitters in Diamond

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