2010
DOI: 10.1117/12.868961
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Single photon emission and detection at the nanoscale utilizing semiconductor nanowires

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Cited by 8 publications
(9 citation statements)
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“…One way to achieve a nanowire pnjunction is to deposit a p-type nanowire on a crossing n-type nanowire (Figure 4a) (Cui 2001;Duan et al 2001;Hayden et al 2006). Further possibilities are photovoltaic devices made out of radial (Figure 4b) (Christesen et al 2012;Czaban et al 2009;Dong et al 2009;Garnett et al 2008;Krogstrup et al 2013;Mariani et al 2011;Tang et al 2011;Tian et al 2007;Wang et al 2010) or axial (Figure 4c) (Christesen et al 2012;Guo et al 2010;Heurlin et al 2011;Kempa et al 2008;Li et al 2009;Lin et al 2011;Reimer 2011;Sivakov et al 2009) pn-junctions within the nanowires. Moreover, p-doped (n-doped) substrates with n-doped (p-doped) nanowires grown on top can also exhibit a photovoltaic effect (Figure 4d) (Garnett et al 2010;Peng et al 2005;Stelzner et al 2008;Tang et al 2008;Wei et al 2009).…”
Section: Photovoltaic Effectsmentioning
confidence: 99%
“…One way to achieve a nanowire pnjunction is to deposit a p-type nanowire on a crossing n-type nanowire (Figure 4a) (Cui 2001;Duan et al 2001;Hayden et al 2006). Further possibilities are photovoltaic devices made out of radial (Figure 4b) (Christesen et al 2012;Czaban et al 2009;Dong et al 2009;Garnett et al 2008;Krogstrup et al 2013;Mariani et al 2011;Tang et al 2011;Tian et al 2007;Wang et al 2010) or axial (Figure 4c) (Christesen et al 2012;Guo et al 2010;Heurlin et al 2011;Kempa et al 2008;Li et al 2009;Lin et al 2011;Reimer 2011;Sivakov et al 2009) pn-junctions within the nanowires. Moreover, p-doped (n-doped) substrates with n-doped (p-doped) nanowires grown on top can also exhibit a photovoltaic effect (Figure 4d) (Garnett et al 2010;Peng et al 2005;Stelzner et al 2008;Tang et al 2008;Wei et al 2009).…”
Section: Photovoltaic Effectsmentioning
confidence: 99%
“…[8]. Over the past decade, single as well as multi-component alloy nanowires [9][10][11] and radial/axial nanowire heterostructures [12] of group III-V materials have been synthesized and characterized [13][14][15][16][17][18][19]. Among the group III-V semiconductors, growth and characterization of nanowires of Sb-based compounds have received little attention until recently despite their potential for applications in infra-red optics, magneto sensors, and thermophotovoltaics [20].…”
Section: Introductionmentioning
confidence: 99%
“…Semiconducting nanowires attracted a lot of interest as promising platforms for Majorana fermions [193][194][195], field effect transistors [196], programmable circuits [197], single-photon sources [198], lasers [199,200], and others. QDs therein form when the confinement in the transverse directions, provided by the wire geometry, is supplemented with an additional confinement in the longitudinal direction, which can be achieved both via electric gates and via structured growth of materials with suitable band offsets.…”
Section: Quantum Dots In Nanowiresmentioning
confidence: 99%