The primary goal of this three-year research program is to establish fusion bonding of semiconductor materials in an ultra-high vacuum (UHV) environment where the properties of the interface can be controlled with atomic-level precision. Such engineering of arbitrary heterointerfaces can be utilized to enable new class of semiconductor optoelectronic devices. The UHV fusion bonding system was designed, constructed and improved in the first two years of the project. In the third year, a wide range of bonding processes has been attempted in UHV and nitrogen environments. More specifically, we (1) utilized the in-situ sputtering system to treat the semiconductor surfaces with selenium prior to bonding, (2) attempted argon and argon/hydrogen plasma treatment of the semiconductor surfaces prior to bonding, and (3) performed wet sulfur passivation techniques prior to introducing the samples into the UHV chamber. We have also arranged near-surface doping of our samples by ion implantation and UV laser annealing to induce surface dipoles. On the detector front, we improved the operational model for visible light photon counters and measured the timing jitter of the devices, which can be explained by the operational model.