Single-phase Pb(Zn1/3Nb2/3)O3 thin films grown by metalorganic chemical vapor deposition: Effects of growth sequence and substrates

Nishida, Ken; Yokoyama, S.; Okamoto, Satoshi; Saito, Keisuke; Uchida, Hiroshi; Koda, Seiichiro; Katoda, Takashi; Funakubo, Hiroshi

doi:10.1016/j.jcrysgro.2006.10.169

Cited by 2 publications

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References 12 publications

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“…The perovskite structure was fabricated by a sequential supply of Pb for the A-sites and of Zn and Nb for the B-sites. The interruption between the precursor pulses was 5 s. [6][7][8] This work employs, for the first time, purging with reactive gases between the CVD pulses and demonstrates the effect of the gas pulsing on the deposition process. For a demonstration of the design concept with a host material and the introduction of another component into the crystal structure, Cu 3 N was chosen as host and Ni was chosen as the other component.…”

Section: Introductionmentioning

confidence: 99%

Gas‐Pulsed CVD for Film Growth in the CuNiN System

Lindahl

Ottosson

Carlsson

2012

Chemical Vapor Deposition

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A new ternary solid solution, Cu 3-x Ni xþy N, is prepared by gas-pulsed CVD at 260 8C. Gas pulses of the precursor mixtures Cu(hfac) 2 þ NH 3 and Ni(thd) 2 þ NH 3 , separated by intermittent ammonia pulses, are employed for the deposition of Cu 3 N and Ni 3 N, respectively. A few monolayers of the nitrides are grown in each CVD pulse and then mixed by diffusion to produce the solid solution. The metal content of the solid solution can be varied continuously from 100% to about 20% Cu, which means that the electrical properties can be varied from 1.6 eV (band gap of Cu 3 N) to metallic (Ni 3 N). This is of interest for various applications, e.g., solar energy, catalysis, and microelectronics.

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Section: Introductionmentioning

confidence: 99%

Gas‐Pulsed CVD for Film Growth in the CuNiN System

Lindahl

Ottosson

Carlsson

2012

Chemical Vapor Deposition

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Growth of (111)-Oriented Epitaxial Bi(Mg0.5Ti0.5)O3 Films and their Characterization

Tanaka

Yamada

Yasui

et al. 2011

KEM

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Crystal structure and electrical properties were investigated for Bi (Mg0.5Ti0.5)O3 films grown on (111)c- and (100)c-oriented SrRuO3//SrTiO3 substrates by pulsed laser deposition. Epitaxial films consisting of a single phase of perovskite were obtained on the (111) substrates. Additionally, the ferroelectricity was ascertained not only from the polarization - electric field hysteresis loops, but also from the piezoelectric response.

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Single-phase Pb(Zn1/3Nb2/3)O3 thin films grown by metalorganic chemical vapor deposition: Effects of growth sequence and substrates

Cited by 2 publications

References 12 publications

Gas‐Pulsed CVD for Film Growth in the CuNiN System

Gas‐Pulsed CVD for Film Growth in the CuNiN System

Growth of (111)-Oriented Epitaxial Bi(Mg<sub>0.5</sub>Ti<sub>0.5</sub>)O<sub>3</sub> Films and their Characterization

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