Single phase {112¯2} GaN on

MOVPE growth of semipolar (112¯2) AlN on m-plane (10<

“…The rms roughness including all surface features is 23 nm for 150 hPa, 4.1 nm for 200 hPa and 5.3 nm for 300 hPa (Table 1) for ð5 Â 5Þ mm 2 AFM images. These values are comparable to ð1122Þ GaN on m-plane sapphire [6,8,17].…”

“…a high V/III ratio, favors ð1122Þ orientation, while growth at lower V/III ratio provides secondary ð1010Þ oriented domains [3]. For the growth of GaN by HVPE [17] and by MOVPE [8] the nitridation has a strong influence on the phase purity. Compared to GaN on m-plane sapphire the growth window for high purity ð1122Þ material is narrower for GaN and wider for AlN.…”

“…For MOVPE growth of ð1122Þ GaN a few approaches have been reported [5][6][7][8]. The different approaches aim for phase purity, i.e.…”

“…Kappers et al [5] report on a nitridation at 1050 1C followed by the deposition of nucleation layer at 540 1C and overgrowth at 1010 1C similar to c-plane GaN. High temperature nucleation at 950-1050 1C was investigated by Lee et al [6] under nitrogen and by Zhu et al [7] and Ploch et al [8] under hydrogen ambient.…”

Phase control of semi-polar and non-polar GaN on cone shaped r-plane patterned sapphire substrates

“…Growth of a pure single phase is necessary to achieve a sufficient crystal quality and low dislocation density [14]. In this work, we investigate the evolution of GaN growth on r-plane CPSS with low temperature (LT) and high temperature (HT) GaN NL grown at different growth pressures.…”