Single-mode 265 µm InGaAsSb/AlInGaAsSb laterally coupled distributed-feedback diode lasers for atmospheric gas detection

Briggs, Ryan M.; Frez, Clifford; Bagheri, Mahmood; Borgentun, Carl; Gupta, J. A.; Witinski, Mark F.; Anderson, James G.; Forouhar, Siamak

doi:10.1364/oe.21.001317

Cited by 25 publications

(8 citation statements)

References 19 publications

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“…A survey of the best data for T1 InGaAsSb QW lasers yields that at λ = 2.03 µm, a narrowridge laser with 3 active QWs from SUNY operated with threshold voltage 0.9V [56]. At the somewhat longer wavelength λ ≈ 2.7 µm, a DFB laser with 6 active QWs from JPL operated with threshold voltage 1.05 V [57], while a broadarea device with 2 QWs from Walter Schottky Institut displayed Vth = 0.75 V [58]. Typical narrow-ridge or broad area T1 lasers from SUNY with 3 active QWs emitting at λ = 3.15-3.4 µm [38,39] operated at threshold voltage 0.8-1.4 V, whereas U. Montpellier reported a slightly higher Vth of 1.6 V for a narrowridge device with 2 QWs and emitting at 3.04 µm [59].…”

Section: Other Considerationsmentioning

confidence: 99%

Comparison of Auger Coefficients in Type I and Type II Quantum Well Midwave Infrared Lasers

Meyer

Canedy

Kim

et al. 2021

IEEE J. Quantum Electron.

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We perform a detailed comparison of 2D Auger coefficients in narrow-gap type-I and type-II quantum wells (T1QWs and T2QWs), and the relative effects of Auger nonradiative decay on midwave infrared lasers employing both types of gain media. Comparison is also made to 3D Auger coefficients in bulk mid-IR materials, by defining a "normalization length" that accounts for the spatial extent of the electron and hole wavefunctions in the quantum wells. The comparisons confirm that Auger recombination in both types of QW is substantially suppressed relative to bulk, due primarily to the effects of compressive strain on the valence band dispersions. We find that the 2D Auger coefficients in T1QWs remain substantially lower than those in T2QWs out to wavelengths beyond 3.5 µm. However, this does not necessarily imply a lower lasing threshold because a substantial fraction of the holes injected into T1QWs occupy lower subbands that do not contribute gain, so more must be injected to reach the lasing threshold. When all of the relevant considerations are combined, the thresholds for the best T1QW and T2QW lasers cross over near λ ≈ 3.0 µm. Other characteristics governing the relative T1QW and T2QW laser performances above threshold, such as maximum output power and wallplug efficiency, are also considered.

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Section: Other Considerationsmentioning

confidence: 99%

Comparison of Auger Coefficients in Type I and Type II Quantum Well Midwave Infrared Lasers

Meyer

Canedy

Kim

et al. 2021

IEEE J. Quantum Electron.

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“…With a shallow-etched grating structure, Briggs et al [23] have successfully fabricated GaSb-based LC-DFB lasers with a larger SMSR of 25 dB. But further improvement was limited by the lower coupling coefficient due to the large distance between the gratings and the ridge waveguide, which is crucial for the performance of a LC-DFB laser.…”

Section: Resultsmentioning

confidence: 99%

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

Huang

Ning

et al. 2018

Nanoscale Res Lett

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In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB and a high thermal stability of dλ/dT = 0.092 nm/K under continuous-wave (CW) operation, which is mainly attributed to the high material gain prepared by modulation p-doping and rapid thermal annealing (RTA) process, and the significantly reduced waveguide losses by shallow-etched gratings and its close proximity to the laser ridge feature in the LC-DFB laser. With this superior performance of the DFB laser, the wide tunable dual-wavelength lasing operation has been obtained by delicately defining different periods for the grating structures on the two sides of the laser ridge or combining the reduced laser cavity length. The wavelength spacing between the two lasing modes can be flexibly tuned in a very wide range from 0.5 to 73.4 nm, corresponding to the frequency difference from 0.10 to 14 THz, which is the largest tuning range by the utilization of single device and hence providing a new opportunity towards the generation of CW THz radiation.

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“…The wafers were processed into ∼4‐µm‐wide ridge waveguide Fabry–Perot (FP) and LC‐DFB lasers. The ridge and grating were fabricated by optical and e‐beam lithography for pattern transfer followed by chlorine‐based inductively coupled reactive ion etching [7]. The approximate etch depth for narrow ridge formation was 2 µm, leaving about 350 nm of p ‐cladding material.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm

Hosoda¹,

Fradet

Frez

et al. 2016

Electron. lett.

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Cascade type-I quantum well GaSb-based laterally coupled distributed feedback diode lasers emitting near 2.9 µm were designed and fabricated. Second order index grating with period of 825 nm was defined by e-beam lithography and etched on both sides of 4-µmwide shallow ridge waveguide. Anti-/neutral reflection coated 2-mmlong devices that were solder-mounted epitaxial side-up demonstrated stable single frequency operation in a wide temperature range with output power of 13 mW at 20°C. Bragg wavelength temperature tuning rate was ∼0.32 nm/K.

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Single-mode 265 µm InGaAsSb/AlInGaAsSb laterally coupled distributed-feedback diode lasers for atmospheric gas detection

Cited by 25 publications

References 19 publications

Comparison of Auger Coefficients in Type I and Type II Quantum Well Midwave Infrared Lasers

Comparison of Auger Coefficients in Type I and Type II Quantum Well Midwave Infrared Lasers

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm

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