Two-dimensional (2D) semiconducting
materials with distinct
anisotropic
physical properties have attracted intense interests. Herein, we show
theoretical predictions that MgXN2 (X = Hf/Zr) monolayers
are auxetic semiconductors with highly anisotropic electronic, optical,
and mechanical properties. The density functional theory calculations
coupled with a PSO algorithm (global-minimum search) suggest that
both MgHfN2 (MgZrN2) monolayers exhibit orthorhombic
symmetry (Pmma) and are direct-gap (indirect-gap)
semiconductors with a bandgap of 2.43 eV (2.13 eV). Specifically,
the MgHfN2 monolayer exhibits highly anisotropic hole mobility
as well as very high electron mobility (∼104 cm2 V–1 s–1). G0W0+BSE calculations indicate that both monolayers bear
notable optical anisotropy and relatively large exitonic binding energy
(∼0.6 eV). In addition, both monolayers acquire remarkable
mechanical anisotropy with a negative in-plane Poisson’s ratio
(∼−0.2) and high Young’s modulus (∼260
N/m). The combination of highly anisotropic electronic, optical, and
mechanical properties endows MgXN2 monolayers as potentially
useful parts in multifunctional nanoelectronic devices.