Single layer MoS<inf>2</inf> band structure and transport

Atomistic full-band simulations of monolayer MoS2 transistors

“…However, our subthreshold characteristics such as a subthreshold slope and DIBL for which the effect of a Schottky barrier is limited, are very similar to [9]. In [10], where contacts appear to be more ideal and saturation is also reached in the 0.2 to 0.3 V range, a somewhat larger transconductance, ~6 mA/μm/V, is obtained, despite slightly heavier band-edge effective masses. We can speculate that the reduced transconductance here is due to some combination of reduced channel quantum (density of states) capacitance via fewer band-edge valleys than were obtained in [10] from different band structure calculations, and overall reduced carrier velocities via the combination of substantial non-parabolicity and degenerate carrier concentrations, perhaps exacerbated by still slower down-channel electrons through selfconsistent electrostatics.…”

“…1(d)). To benchmark our results with prior work, we intentionally chose some similar device parameters, such as identical gate stacks and channel length [9,10]. However, in [9], the authors assumed Schottky barrier contacts to the channel unlike us, which makes one-to-one comparisons difficult.…”

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

“…Extrapolating to a device with a 3 nm HfO 2 gate insulator would predict a limiting channel length feature of B7 nm. Theoretically, for a MOSFET with monolayer MoS 2 (channel thickness: B0.8 nm, dielectric constant: 6.8B7.1 e 0 , where e 0 is the vacuum permittivity 61 ) and 1 nm equivalent oxide thickness (EOT), the electrostatic scaling length l is only about 1.2 nm. These considerations suggest that MoS 2 could be a very promising material for scaled, high-density electronics.…”

A SPICE model of flexible transition metal dichalcogenide field-effect transistors

“…In [26], a physics-based analytical model of a generic double-gate monolayer TMD-FET is developed. While most of the computational studies [9][10][11][23][24][25] assume sub-100-nm channel length and ballistic transport, the work [26] adopts a classical drift-diffusion current model, which is more accurate when describing transistor sizes above 100 nm [32]. As most of the fabricated TMDFETs reported to date have sizes greater than 0.5 µm [12][13][14][15][16][17][18][19][20][21][22], the classical model is more suitable to describe the transfer characteristics in these transistors.…”

“…Before such futuristic flexible TMDFET circuits can be manufactured, simulation plays an important role in evaluating the emerging technology. In fact, there is abundant work in the theoretical and computational studies of transistor-level properties of nanoscale TMDFETs based on non-equilibrium Green's function (NEGF) formalism and/or Schrödinger-Poisson solvers at the cost of very high computational complexity [9][10][11][23][24][25], in which detailed transistorlevel transfer characteristics is reported. However, it is difficult to scale to circuit-level simulations with these approaches due to the high computation time.…”