Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors

Abstract

Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼1.5 μm. The single InAs NW photodetectors displayed minimum hysteresis with a high Ion/Ioff ratio of 10(5). At room temperature, the Schottky-Ohmic contacted photodetectors had an external photoresponsivity of ∼5.3 × 10(3) AW(-1), which is ∼300% larger than that of Ohmic-Ohmic contacted detectors (∼1.9 × 10(3) AW(-1)). A large enhancement in photoresponsivity (∼300%) had also been achieved in metal Au-cluster-decorated InAs NW photodetectors due to the formation of Schottky junctions at the InAs/Au cluster contacts. The photocurrent decreased when the photodetectors were exposed to ambient atmosphere because of the high surface electron concentration and rich surface defect states in InAs NWs. A theoretical model based on charge transfer and energy band change is proposed to explain this observed performance. To suppress the negative effects of surface defect states and atmospheric molecules, new InAs NW photodetectors with a half-wrapped top-gate had been fabricated by using 10 nm HfO2 as the top-gate dielectric.

Emerging technologies for high performance infrared detectors

“…Moreover, NWs of almost all the existing semiconductor materials can now be realized by either top-down or bottom-up approaches. Although a lot of work has been devoted to investigating NW IRPDs in the past few years [88][89][90][91][92][93][94], most of the reported NW IRPDs are limited in the visible and ultraviolet spectral regions [89][90][91], and little work is conducted in the IR region [92,93]. III-V semiconductor NWs with narrow bandgaps are considered as promising candidates for constructing IRPDs.…”

Ultracompact on-chip photothermal power monitor based on silicon hybrid plasmonic waveguides

“…To realize optical power monitoring, various photodetectors have been developed successfully in the past decades [13][14][15][16][17][18][19][20][21][22][23][24]. Among them, a photodetector on silicon is one of the most popular options regarding the unique advantages of silicon material (e.g.…”

“…For the operation wavelength longer than 1.1 μm [e.g. near-infrared (IR) or mid-IR light], silicon becomes transparent with almost zero absorption and one should introduce some other materials with a high absorption coefficient in the wavelength range of > 1.1 μm [14][15][16][17][18][19][20][21][22][23][24]. Particularly, for the optical fiber communication window about 1.55 μm, III-V materials (e.g.…”

“…High-performance photodetectors have been realized with the hybrid platforms of III-V/ Si [14,15] and Ge/Si [17,18]. The responsivity is higher than 1 A/W [16][17][18], and the 3dB bandwidth is even more than 100 GHz [14,15], which is very useful for high-speed optical fiber communication.…”

Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications

“…At the same time, 1D semiconductor nanowires (NWs) have attracted considerable amount of research attention with the detailed exploration as device channels for many different applications owing to their excellent physical properties 19, 20, 21, 22. Semiconductor NW material systems with excellent crystallinity are demonstrated with the extraordinary field‐effect carrier mobility and superior control in the modulation of their electrical properties.…”