Single function drain current model for MESFET/HEMT devices including pulsed dynamic behavior

Rafael-Valdivia, Guillermo; Brady, Ronan; Brazil, T.J.

doi:10.1109/mwsym.2006.249595

Cited by 12 publications

(5 citation statements)

References 10 publications

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“…It demonstrates that by using only one current source based on pulsed measurements, it is now possible to predict the RF performance of the device under test (DUT) under large-signal multi-bias conditions, while accounting for a wide range of low-frequency dynamics. Onetone, two-tone and WCDMA simulations agree with the measured data and thus provide a validation of the essential methodology proposed in [7].…”

supporting

confidence: 65%

“…1 shows the complete large-signal intrinsic circuit implementation of the model within a CAD environment such as ADS. Having de-embedded the extrinsic parasitic elements, the trans-conductances and outputconductances, evaluated from the intrinsic S-parameters, were found to correspond to those determined from the pulsed I-V model [7]. In other words: Hence having established the validity of the pulsed nonlinear current source model (1) from small-signal analysis by (5), it could now be implemented into the large-signal topology as a single current source element now described by the following: Ids = f (VgsiDC, VdsiDC , vgsiRF, vdsi) (6) Here, VgsiDc and VdsiDC, and vgSiRF and vdsiRF represent the gate/drain-source DC and RF intrinsic voltages respectively.…”

Section: Model Formulationmentioning

confidence: 99%

“…Recently, a new model called COBRA-PERU [7] was introduced and implemented using only one current source and a novel 4-terminal topology that models the back-gating and the transition between DC and RF, using dispersive networks in the gate and drain sides within the topology of the equivalent circuit. In related work [8], also based on pulsed measurements, we have demonstrated that by using a different form of the Ids equation, implemented into the same 4-terminal topology, one can predict not only DC and pulsed characteristics but also small-signal RF behavior.…”

mentioning

confidence: 99%

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Large-Signal FET Modeling based on Pulsed Measurements

Brady

Rafael-Valdivia

Brazil

2007

2007 IEEE/MTT-S International Microwave Symposium

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The new FET model presented in this paper highlights a method through which complex current flow dynamics, arising from typical dispersion phenomena, can be modeled in equivalent circuits. Static and bias-dependant dynamic/pulsed currents are characterized using a new single mathematical expression and subsequently implemented into a large-signal circuit topology as a single current source. The model is based on a well-established conventional DC model and only minimal alteration is required. In this work we extend the range of validity to full large-signal operation including accurate prediction of nonlinear harmonic distortion and inter-modulation distortion (IMD) products. Furthermore, the single current source approach enhances the overall equivalent circuit topology's consistency with the physical device, a particularly favorable feature in such device models.

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supporting

confidence: 65%

Section: Model Formulationmentioning

confidence: 99%

mentioning

confidence: 99%

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Large-Signal FET Modeling based on Pulsed Measurements

Brady

Rafael-Valdivia

Brazil

2007

2007 IEEE/MTT-S International Microwave Symposium

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“…El resultado de esta medida es una matriz de 4 columnas que almacena los valores de las corrientes de drenador y de compuerta (Ids e Igs respectivamente) para las diferentes combinaciones de los voltajes aplicados (Vgs y Vds). Para procesar los datos anteriores, se usa la técnica mostrada en [8], donde se hace uso de los denominados "voltajes efectivos", mostrados en (1) y (2).…”

Section: B Método De Extracción De Modelo Lineal Y No Linealunclassified

Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF

Rafael-Valdivia

2019

Rev. Fac. Ing.

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En el presente trabajo se ha presentado un análisis de transistores de efecto de campo usando fuentes de voltaje pulsadas. Se han realizado medidas de microondas en dispositivos de tecnología HEMT’s y LDMOS poniendo en evidencia la diferencia entre el comportamiento estático y dinámico de dichos dispositivos. En base a las medidas se ha realizado un procesamiento de datos derivando una nueva ecuación con la capacidad de reproducir ambos tipos de comportamiento con elevada precisión y en diferentes puntos de operación. Consecuentemente el trabajo aporta un nuevo modelo basado en un circuito no lineal de cuatro terminales. La relevancia de este modelo es la capacidad de predecir los efectos físicos como la dispersión frecuencial y la movilidad electrónica del dispositivo semiconductor. Esto es importante pues la dispersión frecuencial es uno de los problemas más importantes de los sistemas de comunicación modernos que genera efectos memoria limitando la capacidad de transmitir señales de gran ancho de banda. El hecho de poder predecir la movilidad electrónica y la dispersión frecuencial ayudan al diseñador de circuitos a mejorar su calidad y tiempo de diseño. Además, permite a la industria de fabricación de componentes de RF ahorrar costos de producción pues esta técnica permite predecir el comportamiento de los circuitos antes de implementarlos. La metodología para la obtención del modelo compacto ha sido validada a través de la implementación de un amplificador de potencia en tecnología LDMOS usando la técnica propuesta. El modelo propuesto es abierto puesto que la nueva técnica propuesta se puede implementar en cualquiera de los modelos convencionales usados actualmente en el ámbito industrial y académico.

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“…In [9], effective gate-source and drain-source voltages are used. In both cases the drain-source current is made, in essence, a function of the quiescent operating point.…”

Section: A Nonlinear Drain-source Current Modelmentioning

confidence: 99%

Equivalent circuit GaN HEMT model accounting for gate-lag and drain-lag transient effects

King

Brazil

2012

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications

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This paper introduces a full nonlinear compact equivalent circuit model (ECM) for a 10 W Gallium Nitride (GaN) high electron-mobility transistor (HEMT). The model accounts for low-frequency dispersion of both transconductance and output conductance by use of gate and drain filter networks applied to GaN for the first time. Other features of the model include an excellent fit of modelled drain-current to high-power pulsed-IV (P-IV) measurements up to 60 V across a range of quiescent points, using a single function drain-current equation. Global S-parameter fits across the bias plane have also been extracted. Large-signal harmonic sweeps are presented, showing a good fit to measured data over a range of bias points.

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Single function drain current model for MESFET/HEMT devices including pulsed dynamic behavior

Cited by 12 publications

References 10 publications

Large-Signal FET Modeling based on Pulsed Measurements

Large-Signal FET Modeling based on Pulsed Measurements

Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF

Equivalent circuit GaN HEMT model accounting for gate-lag and drain-lag transient effects

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