Single-frequency continuous-wave operation of ring resonator diode lasers

Hohimer, J. P.; Craft, D. C.; Hadley, G. Ronald; Vawter, G.A.; Warren, Mial E.

doi:10.1063/1.105730

Cited by 66 publications

(25 citation statements)

References 6 publications

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“…Another direction that deserves special note is to develop other optofluidic microcavity structures, such as microrings (Hohimer et al 1991), microdisks (McCall et al 1992), microdroplets (Tzeng et al 1984), circular Bragg gratings (Erdogan and Hall 1990) and photonic crystal microcavities (Painter et al 1999). The potential high Q, small mode volume and the adaptive nature of such devices are very attractive for both fundamental studies of light-matter interactions and practical applications such as ultrasensitive biological and chemical sensing.…”

Section: Future Directionsmentioning

confidence: 99%

Optofluidic dye lasers

Psaltis

2007

Microfluid Nanofluid

157

110

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Optofluidic dye lasers are microfabricated liquid dye lasers enabled by the microfluidics technology. The integration of dye lasers with microfluidics not only facilitates the implementation of complete ''lab-on-a-chip'' systems, but also allows the dynamical control of the laser properties which is not achievable with solid-state optical components. We review the recent demonstrations of onchip liquid dye lasers and some of the pre-microfluidics era microscopic dye lasers which are also amenable to microfluidic implementation. Potential applications and future directions are discussed.

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Section: Future Directionsmentioning

confidence: 99%

Optofluidic dye lasers

Psaltis

2007

Microfluid Nanofluid

157

110

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“…Another interesting direction is to implement other laser cavity structures beyond the currently demonstrated Fabry-Perot and DFB types onto the microfluidic platform, such as whispering gallery mode (WGM) resonators including microdisks [30], microrings [31], microtoroids [32], and microspheres [33], annular Bragg reflector (ABR) cavities [34], and photonic crystalbased cavities [35]. Moreover, in addition to provide novel laser cavity structures, the capability of building such liquid-core optical microcavities has implications in both fundamental study and practical applications.…”

Section: Future Directionsmentioning

confidence: 99%

Optofluidic Distributed Feedback Dye Lasers

Psaltis

2007

IEEE J. Select. Topics Quantum Electron.

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Abstract-We review our recent work on poly(dimethylsiloxane) (PDMS)-based optofluidic dye lasers using a guided wave distributed feedback (DFB) cavity. We show experimental results of single-mode operation, an integrated laser array, multiple color dye lasing, mechanical and fluidic tuning, and monolithic integration with microfluidic circuits. Potential applications and future directions are discussed.

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“…Subsequently, the InP substrate was removed by mechanical polishing and selective wet chemical etching, leaving the 250-nm-thick patterned InGaAsP membrane embedded in the cured adhesive. Finally, the adhesive filling the trenches was removed with an isotropic NF 3 lar rings, taken after adhesive removal, is shown in Fig. 2(b).…”

mentioning

confidence: 99%

Vertically emitting annular Bragg lasers using polymer epitaxial transfer

Green

Scheuer

DeRose

et al. 2004

Applied Physics Letters

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Fabrication of a planar semiconductor microcavity, composed of cylindrical Bragg reflectors surrounding a radial defect, is demonstrated. A versatile polymer bonding process is used to transfer active InGaAsP resonators to a low-index transfer substrate. Vertical emission of in-plane modes lasing at telecom wavelengths is observed under pulsed optical excitation with a submilliwatt threshold. Recently, a new ring cavity geometry, based on optimally designed cylindrical Bragg reflectors surrounding a radial defect, was proposed. 14,15 Resonators of this class, known as annular Bragg resonators (ABRs), are designed to support azimuthally propagating modes, with energy concentrated within the defect region by radial Bragg reflection. Optical modes with an electric field having the form E͑r , , z͒ = E͑r , z͒e im have been analyzed using several techniques, including conformal transformation, a transfer matrix approach, coupled mode theory, and finite-difference time-domain simulations. ABR devices are of great interest for their superior sensitivity in biological and chemical sensing applications when compared to conventional total internal reflection (TIR) based resonators. 16 This letter describes the fabrication and experimental demonstration of laser action in a semiconductor annular Bragg resonator.Annular Bragg resonators with high contrast Bragg reflectors were realized in active semiconductor material. The semiconductor medium consisted of a 250-nm-thick InGaAsP layer (n Ϸ 3.35 at = 1.55 m) on top of an InP substrate. The InGaAsP layer included six 75-Å-wide compressively strained InGaAsP quantum wells positioned at the center, with peak photoluminescence occurring at 1559 nm. Epitaxial layers were grown by MOCVD.The ABR fabrication process, illustrated in Fig. 1, proceeded as follows. First, a SiO 2 etch mask layer was deposited by PECVD. A layer of PMMA electron beam resist was then applied by spin-coating. The desired ABR geometry was then defined using a Leica Microsystems EBPG 5000+ direct electron beam writer operating at 100 kV. After development, the PMMA patterns were transferred into the SiO 2 etch mask layer by inductively coupled plasma reactive ion etching (ICP-RIE) using C 4 F 8 plasma. The remaining PMMA was removed with a gentle isotropic O 2 plasma step. The SiO 2 then served as a hard mask for pattern transfer into the active InGaAsP layer, using an ICP-RIE etch employing HI / Ar chemistry. 17 The patterns were etched to a depth of ϳ325 nm. The remaining SiO 2 hard mask was then stripped in a buffered hydrofluoric acid solution. A scanning electron microscope (SEM) image of an ABR device at this stage is shown in Fig. 2(a). To achieve strong vertical confinement, the InGaAsP membrane must be clad by low-index material both above and below. An epitaxial layer transfer technique, 18 using an UV-curable optical adhesive (Norland Products NOA 73, n Ϸ 1.54 at = 1.55 m), was adopted to flip-bond the patterned semiconductor sample to a transparent sapphire substrate. Subsequently, the

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Single-frequency continuous-wave operation of ring resonator diode lasers

Cited by 66 publications

References 6 publications

Optofluidic dye lasers

Optofluidic dye lasers

Optofluidic Distributed Feedback Dye Lasers

Vertically emitting annular Bragg lasers using polymer epitaxial transfer

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