Single-event vulnerability of mixed-signal circuit interfaces

Armstrong, S. E.; Blaine, R. W.; Holman, W.T.; Massengill, L.W.

doi:10.1109/radecs.2011.6131356

Cited by 3 publications

(4 citation statements)

References 10 publications

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“…APPENDIX B SEE is modeled as a noise current source shown in (14) as shown in Fig. 24[18], where is the ion charge transferred by the energy particle, are the constants derived from the device model.…”

Section: Discussionmentioning

confidence: 99%

“…It can be observed from Fig. 5, that the commonly used radiation hardening technique of increasing the capacitor value to decrease the transient effect will not only increase area and power consumption of the system but also reduce the maximum achievable sample rate of the system [2], [3], [14].…”

Section: A System Level Model For Seementioning

confidence: 99%

“…The single event effect is modeled as a Gaussian random voltage source , [14]. The above modeling method is applied to a 12-bit pipelined ADC macro-model to study the single event effects from switches and amplifiers.…”

Section: B See Model For a Pipelined Adcmentioning

confidence: 99%

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Detection and Correction Methods for Single Event Effects in Analog to Digital Converters

Venkatram

Guerber

Gande

et al. 2013

IEEE Trans. Circuits Syst. I

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This paper presents detection and correction methods for single event effects in analog to digital converters. Multi-path ADC based detection method is proposed for single event effects and bit error rate. Two correction schemes are proposed for single event effects based on multi-path ADC structure. 1) Two-path ADC based detection scheme with skip and fill algorithm based correction scheme. 2) Three-path ADC based detection scheme with majority voting based correction scheme. Advantages and limitations of both the methods are presented with simulation results. In particular, the three-path ADC can detect and correct for single event effects independent of repetition rate, magnitude of single event effects and the choice of data converter architecture. In three path ADC technique, the accuracy degradation is less than 1.7 dB or 0.28 bit for the Nyquist bandwidth for single event effects. Bit-Error Rate (BER) is effectively squared for three-path ADC as compared to a conventional ADC.Index Terms-Analog-digital conversion, bit error rate, metastability, pipeline ADC and multi-path ADC, radiation effects, radiation hardening by design, single event effects, single event upset, skip and fill interpolation, split-ADC technique, transient radiation effects.

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Section: Discussionmentioning

confidence: 99%

Section: A System Level Model For Seementioning

confidence: 99%

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Detection and Correction Methods for Single Event Effects in Analog to Digital Converters

Venkatram

Guerber

Gande

et al. 2013

IEEE Trans. Circuits Syst. I

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“…Regarding SiGe HBT-based CML, an extensive analysis regarding the physics of SEU is presented in [16][17][18]. As an RHBD approach, a technique that actively cancels charge in a sensitive node was proposed and demonstrated by Armstrong et al [19]. Different RHBD techniques have been proposed to mitigate SEEs in CML circuits such as device level mitigation [20][21][22], demonstrating the use of p-n-p SiGe HBTs, transistor level layout modification, and shared dummy collector for SEU mitigation.…”

Section: Introductionmentioning

confidence: 99%

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

Sarker

Jung

Ildefonso

et al. 2020

Sensors

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It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time significantly decrease. In the present work, we demonstrate how radiation hardening by design (RHBD) techniques utilized in DC bias blocks only (current mirrors) can also improve the SET response in AC signal paths of switching circuits (e.g., current-mode logic, CML) without any additional hardening in those AC signal paths. Four CML circuits both with and without RHBD current mirrors were fabricated in 130 nm SiGe HBT technology. Two existing RHBD techniques were employed separately in the current mirrors of the CML circuits: (1) applying internal negative feedback and (2) adding a large capacitor in a sensitive node. In addition, these methods are also combined to analyze the overall SET performance. The single-event transients of the fabricated circuits were captured under the two-photon-absorption laser-induced single-event environment. The measurement data clearly show significant improvements in SET response in the AC signal paths of the CML circuits by using the two radiation hardening techniques applied only in DC current mirrors. The peak output transient current is notably reduced, and the settling time upon a laser strike is shortened significantly.

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