Single-event sensitivity of a single SRAM cell

Darracq, Frédéric; Beauchene, T.; Pouget, Vincent; Lapuyade, Hervé; Lewis, Dean; Fouillat, P.; Touboul, A.

doi:10.1109/tns.2002.1039688

Cited by 10 publications

(3 citation statements)

References 11 publications

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“…SRAM (Static Random Access Memory) laser exposure is known to cause bit-flips [13], [6], [1], [5], a phenomenon called Single Event Upset (SEU). By tuning the beam's energy level below a destructive threshold, the target will not suffer any permanent damage.…”

Section: A Photoelectrical Effects Of Laser On Siliconmentioning

confidence: 99%

“…The charge carriers induced in the collection volume of the drainsubstrate junction of the blocked transistor are collected and create a transient current that inverts logically the inverter's output voltage. This voltage inversion is in turn applied to the second inverter that switches to its opposite state: all in all, a bit flip happens [6], [1].…”

Section: A Photoelectrical Effects Of Laser On Siliconmentioning

confidence: 99%

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How to flip a bit?

Agoyan

Dutertre

Mirbaha

et al. 2010

2010 IEEE 16th International on-Line Testing Symposium

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Section: A Photoelectrical Effects Of Laser On Siliconmentioning

confidence: 99%

Section: A Photoelectrical Effects Of Laser On Siliconmentioning

confidence: 99%

How to flip a bit?

Agoyan

Dutertre

Mirbaha

et al. 2010

2010 IEEE 16th International on-Line Testing Symposium

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“…It may affect the computations of the target circuit or some of its memory elements. Hence, SRAMsa r es u b j e c tt ob i t -fl i pw h e n exposed to a laser beam [10], [12]. We have reported in [13] experiments showing our ability to inject single byte and even single bit faults in the SRAM of the same device.…”

Section: A Laser Fault Injectionmentioning

confidence: 87%

Differential analysis of Round-Reduced AES faulty ciphertexts

Mirbaha

Dutertre

Tria³

2013

2013 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS)

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This paper describes new Round Reduction analysis attacks on an Advanced Encryption Standard (AES)i m p l e m e ntation by laser fault injection. The previous round reduction attacks require both of spatial and temporal accuracies in order to execute only one, two or nine rounds. We present new attacks by more flexible fault injection conditions. Our experimentsa r e carried out on an 8-bit microcontroller which embeds a software AES with pre-calculated round keys. Faults are injected either into the round counter itself or into the reference of its total round number. The attacks may result to the use of a faulty round key at the last one or two executed rounds. The cryptanalysis of the obtained round-reduced faulty ciphertexts resorts tot h e differentiation techniques used by Differential Fault Analysis.

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Modulus fault attacks against RSA–CRT signatures

et al. 2011

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Abstract. RSA-CRT fault attacks have been an active research area since their discovery by Boneh, DeMillo and Lipton in 1997. We present alternative key-recovery attacks on RSA-CRT signatures: instead of targeting one of the sub-exponentiations in RSA-CRT, we inject faults into the public modulus before CRT interpolation, which makes a number of countermeasures against Boneh et al.'s attack ineffective.Our attacks are based on orthogonal lattice techniques and are very efficient in practice: depending on the fault model, between 5 to 45 faults suffice to recover the RSA factorization within a few seconds. Our simplest attack requires that the adversary knows the faulty moduli, but more sophisticated variants work even if the moduli are unknown, under reasonable fault models. All our attacks have been fully validated experimentally with fault-injection laser techniques.

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Single-event sensitivity of a single SRAM cell

Cited by 10 publications

References 11 publications

How to flip a bit?

How to flip a bit?

Differential analysis of Round-Reduced AES faulty ciphertexts

Modulus fault attacks against RSA–CRT signatures

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